High Bias Transport and Magnetometer Design in Open Quantum Dots

M. Switkes; A. G. Huibers; C. M. Marcus; K. Campman; A. C. Gossard

doi:10.1063/1.120789

High Bias Transport and Magnetometer Design in Open Quantum Dots

介观与纳米尺度物理 2009-10-30 v1

作者: M. Switkes , A. G. Huibers , C. M. Marcus , K. Campman , A. C. Gossard

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摘要

We report transport measurements as a function of bias in open semiconductor quantum dots. These measurements are well described by an effective electron temperature derived from Joule heating at the point contacts and cooling by Wiedemann-Franz out-diffusion of thermal electrons. Using this model, we propose and analyze a quantum dot based sensor which measures absolute magnetic field at micron scales with a noise floor of $\sim 50 \mu\phi_{0} / \sqrt{Hz}$ at 300 mK.

关键词

charge carrier mobility magnetization sensors and measurement

引用

@article{arxiv.cond-mat/9708224,
  title  = {High Bias Transport and Magnetometer Design in Open Quantum Dots},
  author = {M. Switkes and A. G. Huibers and C. M. Marcus and K. Campman and A. C. Gossard},
  journal= {arXiv preprint arXiv:cond-mat/9708224},
  year   = {2009}
}

备注

10 pages including 3 figures

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