Zero-Bias Conductance Through Side-Coupled Double Quantum Dots
摘要
Low temperature zero-bias conductance through two side-coupled quantum dots is investigated using Wilson's numerical renormalization group technique. A low-temperature phase diagram is computed. Near the particle-hole symmetric point localized electrons form a spin-singlet associated with weak conductance. For weak inter-dot coupling we find enhanced conductance due to the two-stage Kondo effect when two electrons occupy quantum dots. When quantum dots are populated with a single electron, the system enters Kondo regime with enhanced conductance. Analytical expressions for the width of the Kondo regime and the Kondo temperature in this regime are given.
引用
@article{arxiv.cond-mat/0602381,
title = {Zero-Bias Conductance Through Side-Coupled Double Quantum Dots},
author = {J. Bonca and R. Zitko},
journal= {arXiv preprint arXiv:cond-mat/0602381},
year = {2015}
}
备注
to be published in the Proceedings of the NATO Advanced Research Workshop on "Electron Correlations in New Materials and Nanosystems" held in Yalta, Ukraine, 19 - 23 September 2005 (NATO Science Series II, Springer 2006)