中文

Fractional quantum Hall effect without energy gap

介观与纳米尺度物理 2009-11-11 v1

摘要

In the fractional quantum Hall effect regime we measure diagonal (ρxx\rho_{xx}) and Hall (ρxy\rho_{xy}) magnetoresistivity tensor components of two-dimensional electron system (2DES) in gated GaAs/Alx_{x}Ga1x_{1-x}As heterojunctions, together with capacitance between 2DES and the gate. We observe 1/3- and 2/3-fractional quantum Hall effect at rather low magnetic fields where corresponding fractional minima in the thermodynamical density of states have already disappeared manifesting complete suppression of the quasiparticle energy gaps.

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引用

@article{arxiv.cond-mat/0603835,
  title  = {Fractional quantum Hall effect without energy gap},
  author = {S. S. Murzin and S. I. Dorozhkin and G. E. Tsydynzhapov and V. N. Zverev},
  journal= {arXiv preprint arXiv:cond-mat/0603835},
  year   = {2009}
}

备注

4 pages, 4 figures