相关论文: Fractional quantum Hall effect without energy gap

The fractional quantum Hall (FQH) effect refers to the strongly-correlated phenomena and the associated quantum phases of matter realized in a two-dimensional gas of electrons placed in a large perpendicular magnetic field. In such systems,…

The fractional quantum Hall effect (FQHE) stands as a quintessential manifestation of an interacting two-dimensional electron system. One of FQHE's most fundamental characteristics is the energy gap separating the incompressible ground…

We observe fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $\nu=1/2$ in two-dimensional hole systems confined to GaAs quantum wells of width 30 to 50 nm and having bilayer-like charge distributions.…

Fractional quantum Hall effect energy gaps have been measured in GaAs/GaAlAs heterojunctions as a function of Zeeman energy, which is varied by applying hydrostatic pressure up to 20 kbar. The gap at v=1/3 decreases with pressure until the…

We report the observation of fractional quantum Hall (FQH) effects in a two-dimensional electron gas (2DEG) confined to an InAs/AlGaSb quantum well, using a dual-gated Hall-bar device allowing for the independent control of the vertical…

We report an experimental investigation of fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $\nu$ = 1/2 in very high quality wide GaAs quantum wells, and at very high magnetic fields up to 45 T. The…

In this letter, we discuss the recently proposed fractional quantum Hall effect in the absence of Landau levels. It is shown that the parton construction can explain all properties of 1/3 state, including the effective charge of…

The fractional quantum Hall effect (FQHE) occurs at certain magnetic field strengths B*(n) in a two-dimensional electron gas of density n at strong magnetic fields perpendicular to the plane of the electron gas. At these magnetic fields…

The fractional quantum Hall (FQH) effect arises from strong electron correlations in a quantising magnetic field, and features exotic emergent phenomena such as electron fractionalisation. Using the diagrammatic Monte Carlo approach with…

Magnetotransport measurements on two-dimensional electrons confined to wide GaAs quantum wells reveal a remarkable evolution of the ground state at filling factor $\nu=1/2$ as we tilt the sample in the magnetic field. Starting with a…

Magnetoresistance measurements have been performed on a gated two-dimensional electron system (2DES) separated by a thin barrier layer from a layer of InAs self-assembled quantum dots (QDs). Clear features of the quantum Hall effect were…

It is demonstrated that all observed fractions at moderate Landau level fillings in the quantum Hall effect can be obtained without recourse to the phenomenological concept of composite fermions. The possibility to have the special…

We discuss the orbital effect of a tilted magnetic field on the quantum Hall effect in parabolic quantum wells. Many-body states realized at the fractional 1/3 and 1/2 filling of the second electronic subband are studied using finite-size…

We measure the chemical potential jump across the fractional gap in the low-temperature limit in the two-dimensional electron system of GaAs/AlGaAs single heterojunctions. In the fully spin-polarized regime, the gap for filling factor…

In a GaAs/AlGaAs quantum well of electron density 1x10^{11} cm^{-2} we observe a fractional quantum Hall effect (FQHE) at filling factors nu=4/11, and 5/13, and weaker states at nu=6/17, 4/13, 5/17 and 7/11. These sequences of fractions do…

It is demonstrated that all observed fractions at moderate Landau level fillings for the quantum Hall effect can be obtained without recourse to the phenomenological concept of composite fermions. The possibility to have the special…

The discovery of the fractional quantum Hall effect in GaAs-based semiconductor devices has lead to new advances in condensed matter physics, in particular the possibility for exotic, topological phases of matter that possess fractional,…

These lecture notes yield an introduction to quantum Hall effects both for non-relativistic electrons in conventional 2D electron gases (such as in semiconductor heterostructures) and relativistic electrons in graphene. After a brief…

Magneto-transport measurements in a clean two-dimensional electron system confined to a wide GaAs quantum well reveal that, when the electrons occupy two electric subbands, the sequences of fractional quantum Hall states observed at high…

The integer quantum anomalous Hall (QAH) effect is a lattice analog of the quantum Hall effect at zero magnetic field. This striking transport phenomenon occurs in electronic systems with topologically nontrivial bands and spontaneous…