中文

Electron Scattering in AlGaN/GaN Structures

介观与纳米尺度物理 2009-11-10 v1

摘要

We present data on mobility lifetime, τt\tau_t, quantum lifetime, τq\tau_q, and cyclotron resonance lifetime, τCR\tau_{CR}, of a sequence of high-mobility two-dimensional electron gases in the AlGaN/GaN system, covering a density range of 14.5×1012\sim1-4.5\times10^{12}cm2^{-2}. We observe a large discrepancy between τq\tau_q and τCR\tau_{CR} (τqτCR\tau_q\sim\tau_{CR}/6) and explain it as the result of density fluctuations of only a few percent. Therefore, only τCR\tau_{CR} --and not τq\tau_q -- is a reliable measure of the time between electron scattering events in these specimens. The ratio τt/τCR\tau_t / \tau_{CR} increases with increasing density in this series of samples, but scattering over this density range remains predominantly in the large-angle scattering regime.

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引用

@article{arxiv.cond-mat/0312638,
  title  = {Electron Scattering in AlGaN/GaN Structures},
  author = {S. Syed and M. J. Manfra and Y. J. Wang and R. J. Molnar and H. L. Stormer},
  journal= {arXiv preprint arXiv:cond-mat/0312638},
  year   = {2009}
}