镉掺杂对SnTe结构和热电性能的影响
材料科学
2026-04-14 v1
摘要
采用固相反应法合成Sn1-xInxTe样品。从电阻和热电导数据估算合成样品的功率系数。报告In掺杂到SnTe热电材料中所导致的结构参数、电阻和热电性能的修改。通过X射线衍射数据的Rietveld精炼，确认Sn被In取代。从X射线衍射数据的精炼中揭示合成样品中微量嵌入相。采用Williamson-Hall和修正Williamson-Hall方法估算位错密度和应变。综合合成的Sn1-xInxTe样品中，达到最高功率系数和最大主机相的样品为Sn0.96In0.04Te。
引用
@article{arxiv.2604.11117,
title = {Effect of Indium doping on structural and thermoelec-tric properties of SnTe},
author = {Diptasikha Das and A. Jana and S. Mahakal and Pallabi Sardar and J. Seal and Shamima Hussain and Kartick Malik},
journal= {arXiv preprint arXiv:2604.11117},
year = {2026}
}
备注
6 pages, 2 figures, NATIONAL CONFERENCE ON FRONTIERS IN MODERN PHYSICS (NCFMP 2024), Adamas University, Kolkata, West Bengal, India