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LEC和外延GaAs中陷阱谱的分析

高能物理 - 实验 2009-10-31 v1

作者: J. Vaitkus , E. Gaubas , V. Kazukauskas , V. Rinkevicius , J. Storasta , R. Tomasiunas , K. M. Smith , V. O'Shea

在 arXiv 上查看 ↗ PDF ↗ DOI ↗

摘要

分析了不同的陷阱参数测量方法。利用瞬态光电导和热激效应研究了LEC SI-GaAs和高阻外延GaAs中陷阱的影响。分析了TSC的特性，并表明其与晶体微观不均匀性的影响有关。

关键词

trap spectra LEC GaAs epitaxial GaAs transient photoconductivity thermally stimulated current

引用

@article{arxiv.hep-ex/9911048,
  title  = {Analysis of trap spectra in LEC and epitaxial GaAs},
  author = {J. Vaitkus and E. Gaubas and V. Kazukauskas and V. Rinkevicius and J. Storasta and R. Tomasiunas and K. M. Smith and V. O'Shea},
  journal= {arXiv preprint arXiv:hep-ex/9911048},
  year   = {2009}
}

备注

Invited talk, 6-th Workshop on Gallium Arsenide and Related Compounds June 22-26, 1998 Praha-Pruhonice, Czech Republic