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相关论文: Analysis of trap spectra in LEC and epitaxial GaAs

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The decoupling of epitaxial factors influencing on the dynamic instabilities of AlGaN/GaN metal-insulator semiconductor high electron mobility transistors is investigated. Three different sets of samples have been analyzed by means of…

材料科学 · 物理学 2020-02-07 M. Huber , G. Pozzovivo , I. Daumiller , G. Curatola , L. Knuuttila , M. Silvestri , A. Bonanni , A. Lundskog

Epitaxial low temperature grown GaAs (LT-GaAs) on silicon (LT-GaAs/Si) has the potential for terahertz (THz) photoconductive antenna applications. However, crystalline, optical and electrical properties of heteroepitaxial grown LT-GaAs/Si…

Using infrared spectroscopy at grazing angle of incidence we study the electrodynamical properties of high temperature superconductors. We review some of our experiments where transverse polarized light is absorbed by longitudinal optical…

凝聚态物理 · 物理学 2008-02-03 D. van der Marel , J. Schützmann , H. S. Somal , J. W. van der Eb

The trap-induced hysteresis on the performance of a graphene field-effect transistor is experimentally diminished here by applying consecutive gate-to-source voltage pulses of opposing polarity. This measurement scheme is a practical and…

介观与纳米尺度物理 · 物理学 2020-10-29 Anibal Pacheco-Sanchez , Nikolaos Mavredakis , Pedro C. Feijoo , Wei Wei , Emiliano Pallecchi , Henri Happy , David Jiménez

We investigate pseudogap phenomena in the unitarity limit of a trapped superfluid Fermi gas. Including effect of strong pairing fluctuations within a $T$-matrix approximation, as well as effects of a harmonic trap within the local density…

量子气体 · 物理学 2015-05-28 Ryota Watanabe , Shunji Tsuchiya , Yoji Ohashi

Radio frequency spectra of a trapped unitary 6Li gas are reported and analyzed in terms of a theoretical approach that includes both final-state and trap effects. Final-state effects play a crucial role in evidencing two main peaks both…

The methodology for a heterodyned laser-induced transient thermal grating technique for non-contact, non-destructive measurements of thermal transport in opaque material is presented. Phase-controlled heterodyne detection allows us to…

A new acousto-electrical method making use of transient transverse acoustoelectric voltage (TAV) to study solid state structures is reported. This voltage arises after a surface acoustic wave (SAW) generating the signal is switched off.…

材料科学 · 物理学 2007-05-23 I. V. Ostrovskii , S. V. Saiko , O. Ya. Olikh , H. G. Walther

The influence of reaction order and trap-assisted recombination on continuous-wave photoinduced absorption measurements is clarified through analytical calculations and numerical simulations. The results reveal the characteristic influence…

材料科学 · 物理学 2017-03-20 Nora M. Wilson , Simon Sandén , Oskar J. Sandberg , Ronald Österbacka

This paper discusses the transmission line pulse (TLP) analysis, generally used for electrostatic discharge (ESD) device characterization, as high potential usable tool also for non-ESD structures. TLP technique, combined with DC and pulsed…

The influence of controlable parameters like temperature and wavelength on the trajectories of light in a nematic liquid crystal with topological defects is studied through a geometric model. The model incorporates phenomenological details…

软凝聚态物质 · 物理学 2009-11-13 Caio satiro , Fernando Moraes

We study impact of the near-interfacial oxide traps on the C-V and I-V characteristics of graphene gated structures. Methods of extraction of interface trap level density in graphene field effect devices from the capacitance-voltage…

介观与纳米尺度物理 · 物理学 2014-05-23 G. I. Zebrev , E. V. Melnik , A. A. Tselykovskiy

Electronic trap states are a critical yet unavoidable aspect of semiconductor devices, impacting performance of various electronic devices such as transistors, memory devices, solar cells, and LEDs. The density, energy level, and position…

The spectral density of localized states in the band gap of pentacene (trap DOS) was determined with a pentacene-based thin-film transistor from measurements of the temperature dependence and gate-voltage dependence of the contact-corrected…

材料科学 · 物理学 2010-02-08 Wolfgang L. Kalb , Bertram Batlogg

Transient grating spectroscopy (TGS) is a material characterization technique based on laser-induced thermoelastic excitation of thermal and acoustic gratings. On opaque samples, these gratings are dynamic surface displacements that reflect…

材料科学 · 物理学 2026-05-01 Jakub Kušnír , Tomáš Grabec , Petr Sedlák , Pavla Stoklasová , Hanuš Seiner

The formation of epitaxial graphene on SiC is monitored in-situ using low-energy electron diffraction (LEED). The possibility of using LEED as an in-situ thickness monitor of the graphene is examined. The ratio of primary diffraction spot…

材料科学 · 物理学 2010-11-23 P. J. Fisher , Luxmi , N. Srivastava , S. Nie , R. M. Feenstra

We investigate the influence of microstructural traps on hydrogen diffusion and embrittlement in the presence of cyclic loads. A mechanistic, multi-trap model for hydrogen transport is developed, implemented into a finite element framework,…

材料科学 · 物理学 2020-08-13 Rebeca Fernández-Sousa , Covadonga Betegón , Emilio Martínez-Pañeda

Pump-probe optical methods like transient grating spectroscopy (TGS) enable rapid, nondestructive thermoelastic property measurements. But, in phonon-dominated ceramics, they can underpredict bulk thermal diffusivity when long mean free…

The observation of distinct peaks in tokamak core reflectometry measurements - named quasi-coherent-modes (QCMs) - are identified as a signature of Trapped-Electron-Mode (TEM) turbulence [H. Arnichand et al. 2016 Plasma Phys. Control.…

等离子体物理 · 物理学 2017-07-13 J. Citrin , H. Arnichand , J. Bernardo , C. Bourdelle , X. Garbet , F. Jenko , S. Hacquin , M. J. Pueschel , R. Sabot

This article presents a theoretical model for the calculation of the current impulse from X-ray induced conductivity in wide-gap semiconductors that contain different types of traps and recombination centres. The absorption of one X-ray…

材料科学 · 物理学 2014-12-11 A. Sofiienko , V. Ya. Degoda
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