GaInN/GaN 异质结构中的合金效应
凝聚态物理
2007-05-23 v1
摘要
我们指出，GaN 与 InN 之间的能带位移大且载子有效质量重，这排除了 Virtual Crystal Approximation 用于描述 Ga_(1-x)In_(x)N/GaN 异质结构电子结构的可能性，而该近似对 Ga_(1-x)In_(x)As/GaAs 异质结构则非常良好。
关键词
引用
@article{arxiv.cond-mat/0311133,
title = {Alloy effects in GaInN/GaN heterostructures},
author = {Duc Phuong Nguyen and Nicolas Regnault and Robson Ferreira and Gerald Bastard},
journal= {arXiv preprint arXiv:cond-mat/0311133},
year = {2007}
}
备注
submitted to Applied Physics Letter