应变 GaAs/GaAsP 超晶格光电阴极极化电子发射的系统研究
仪器与探测器
2009-11-10 v1
摘要
采用气源分子束外延生长了 GaAs/GaAsP 应变超晶格阴极，并研究了其自旋极化电子光发射。系统地改变超晶格结构参数以优化光发射特性。在量子效率谱中可重复观测到重空穴和轻空穴跃迁，从而能够直接测量能带能量和能量分裂。已观测到电子自旋极化度高达 86% 且量子效率超过 1%。
引用
@article{arxiv.physics/0412099,
title = {A systematic study of polarized electron emission from strained GaAs/GaAsP superlattice photocathodes},
author = {T. Maruyama and D. -A. Luh and A. Brachmann and J. E. Clendenin and E. L. Garwin and S. Harvey and J. Jiang and R. E. Kirby and C. Y. Prescott and R. Prepost and A. M. Moy},
journal= {arXiv preprint arXiv:physics/0412099},
year = {2009}
}