Related papers: Electrically injected GeSn lasers on Si operating …
Application of visible or infrared (IR) lasers for spectroscopy of highly-charged ions (HCI) has not been particularly extensive so far due to a mismatch in typical energies. We show here that the energy difference between the two lowest…
Herein, we report the use of nanostructured crystalline Si as a thermoelectric material and its integration into thermoelectric harvesters. The proof-of-concept relies on the partial suppression of lattice thermal transport by introducing…
The manufacturing cost of quantum cascade lasers is still a major bottleneck for the adoption of this technology for chemical sensing. The integration of Mid-Infrared sources on Si substrate based on CMOS technology paves the way for…
We present the first observation, to our knowledge, of lasing from a levitated, dye droplet. The levitated droplets are created by computer controlled pico-liter dispensing into one of the nodes of a standing ultrasonic wave (100 kHz),…
Ge1-xSnx and Si1-x-yGeySnx alloys are promising materials for future opto- and nanoelectronics applications. These alloys enable effective band-gap engineering, broad adjustability of their lattice parameter, exhibit much higher carrier…
The quest to improve the thermoelectric figure of merit has mainly followed the roadmap of lowering the thermal conductivity while keeping unaltered the power factor of the material. Ideally an electron-crystal phonon-glass system is…
We demonstrate an injection-locked 399 nm laser system with up to 1 W output power and a locked power fraction of 0.57. The system consists of a high power, multimode diode laser that is seeded by 5 mW from a single-mode external cavity…
We demonstrate active embedded microfluidic cooling in $\beta$-Ga$_2$O$_3$. We employ a cost-effective infra-red laser etch setup to achieve controlled etching of micro-channels in 500 um thick $\beta$-Ga$_2$O$_3$ substrate. The…
Silicon photonic integration has gained great success in many application fields owing to the excellent optical device properties and complementary metal-oxide semiconductor (CMOS) compatibility. Realizing monolithic integration of III-V…
We report the successful fabrication of superconducting tantalum nitride (TaN) thin films using a pulsed laser deposition technique with 1064 nm radiation. Films with thickness $ \sim $ 100 nm deposited on MgO (100) single crystals and on…
We present optical Thomson scattering measurements of electron density and temperature in a large-scale (~2 cm) exploding laser plasma produced by irradiating a solid target with a high energy (5-10 J) laser pulse at high repetition rate (1…
This paper presents the experimental results on research of growth processes of GaAs layers on silicon substrates by molecular beam epitaxy. The formation of buffer Si layer in a single growth process has been found to significantly improve…
Due to their high optical phonon energies GaInP/AlGaInP heterostructures are a promising active medium to solve the problem of creating compact semiconductor sources with an operating frequency range of 5.5-7 THz. In this work, the…
Silicon nitride (SiN) has emerged as a promising platform for integrated nonlinear photonics because of its low propagation loss, wide transparency window, and CMOS compatibility. Nonlinear processes arising from photon-electron…
In this research, semiconductor-metallic hybrid nano-disk laser based on InGaAsP multi quantum wells (MQWs) or InGaAs bulk material membranes were designed, fabricated and characterized. The quality factors of surface-plasmon-polariton…
We have designed and fabricated all-epitaxial ZnSe-based optical micropillars exhibiting the strong coupling regime between the excitonic transition and the confined optical cavity modes. At cryogenic temperatures, under non-resonant pulsed…
We demonstrate monolithically grown germanium-tin (GeSn) on silicon avalanche photodiodes (APDs) for infrared light detection. A relatively thinner Ge buffer design was adopted to allow effective photo carriers to transport from the GeSn…
In the course of the high-frequency upgrade of GEO 600, its optical configuration was extended by a squeezed-light laser [1]. Recently, a non-classically enhanced measurement sensitivity of GEO 600 was reported [2]. In this paper, a…
An erbium doped micro-laser is demonstrated utilizing $\mathrm{SiO_{2}}$ microdisk resonators on a silicon chip. Passive microdisk resonators exhibit whispering gallery type (WGM) modes with intrinsic optical quality factors of up to…
We present the first detection of electrons with kinetic energy in the 100 eV range with transition-edge sensors (TESs). This has been achieved with a $(100\times 100)$ $\mu$m$^2$ Ti-Au bilayer TES, with a critical temperature of about 84…