We demonstrate active embedded microfluidic cooling in β-Ga2O3. We employ a cost-effective infra-red laser etch setup to achieve controlled etching of micro-channels in 500 um thick β-Ga2O3 substrate. The micro-channels are about 210 um deep and 340 um wide. Resistive heating is used as proof-of-concept. At a water flow rate of 50 ml/min, a 50% reduction in surface temperature from ~140∘C to ~72∘C is achieved for 3.5 W of input power. The experimental observations are backed by thermal simulation. This work is expected to lead to a new paradigm in thermal management in emerging β-Ga2O3 devices.
@article{arxiv.2304.02645,
title = {Laser Etch Enabled Active Embedded Microfluidic Cooling in $\beta$-Ga$_2$O$_3$},
author = {Shonkho Shuvro and Roopa Jayaramaiah and Rangarajan Muralidharan and Digbijoy N. Nath and Prosenjit Sen},
journal= {arXiv preprint arXiv:2304.02645},
year = {2023}
}