English

Demonstration of an erbium doped microdisk laser on a silicon chip

Optics 2009-11-13 v1

Abstract

An erbium doped micro-laser is demonstrated utilizing SiO2\mathrm{SiO_{2}} microdisk resonators on a silicon chip. Passive microdisk resonators exhibit whispering gallery type (WGM) modes with intrinsic optical quality factors of up to 6×1076\times{10^{7}} and were doped with trivalent erbium ions (peak concentration 3.8×1020cm3)\mathrm{\sim3.8\times{10^{20}cm^{-3})}} using MeV ion implantation. Coupling to the fundamental WGM of the microdisk resonator was achieved by using a tapered optical fiber. Upon pumping of the 4^{4}% I_{15/2}\longrightarrow 4I13/2^{4}I_{13/2} erbium transition at 1450 nm, a gradual transition from spontaneous to stimulated emission was observed in the 1550 nm band. Analysis of the pump-output power relation yielded a pump threshold of 43 μ\mathrm{\mu}W and allowed measuring the spontaneous emission coupling factor: β1×103\beta\approx1\times10^{-3}.

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Cite

@article{arxiv.physics/0608270,
  title  = {Demonstration of an erbium doped microdisk laser on a silicon chip},
  author = {T. J. Kippenberg and J. Kalkman and A. Polman and K. J. Vahala},
  journal= {arXiv preprint arXiv:physics/0608270},
  year   = {2009}
}