Related papers: Electrically injected GeSn lasers on Si operating …
We have discovered significant temperature anomalies of the linear electrooptical (EOE) coefficients for the K2ZnCl4 nanocrystallites embedded into the polymer matrices. The EOE efficiency was operated by external dc-electric field and UV…
The first lithium-drifted silicon (Si(Li)) detectors to satisfy the unique geometric, performance, and cost requirements of the General Antiparticle Spectrometer (GAPS) experiment have been produced by Shimadzu Corporation. The GAPS Si(Li)…
The study proposes an ultra-thin back side illuminated (BSI) and top-illuminated, Ge on Si photodetector (PD), for 1 to 1.4 microns wavelength range. The Ge thickness of 350 nm allows us to achieve high-speed performance at >60 GHz, while…
Recently there is an increasing attention to electrically pumped room temperature sub-wavelength plasmon sources because of their various potential applications mainly in the integrated plasmonic field. In this paper, a GaAs/AlGaAs quantum…
A laser-Compton backscattering beam, which we call a `Laser-Electron Photon' beam, was upgraded at the LEPS beamline of SPring-8. We accomplished the gains in backscattered photon beam intensities by factors of 1.5--1.8 with the injection…
We make systematic measurements of Raman anti-Stokes/Stokes (aS/S) ratios using two different laser excitations (514 and 633 nm) of rhodamine 6G (RH6G) on dried Ag colloids over a wide range of temperatures (100 to 350 K). We show that a…
We demonstrate the first microchip semiconductor membrane external-cavity surface-emitting laser. This compact type of laser consists solely of a semiconductor gain region present as a micron-thin membrane, sandwiched between two…
Ultrafast laser systems operating with high-average power in the wavelength range from 1.9 um to 3 um are of interest for a wide range of applications for example in spectroscopy, material processing and as drivers for secondary sources in…
We report on the design of a waveguide coupled GeSn microdisk-laser cavity in which the germanium virtual substrate serving as a template for GeSn growth is repurposed for the definition of passive on-chip interconnection waveguides. A main…
We present a planar laser diode based on a simple fabrication scheme compatible with virtually any geometry accessible by standard semiconductor lithography technique. We show that our lasers exhibit ~1 GHz -3dB-modulation-bandwidth already…
The ability to generate a laser field with ultratight spatial confinement is important for pushing the limit of optical science and technology. Although plasmon lasers can offer sub-diffraction-confined laser fields, it is restricted by a…
The surface-enhanced Raman scattering (SERS) signal from an AgFON plasmonic substrate, recoated with benzenethiol, was observed to increase by about 100% upon heating for 3.5 min at 100C and 1.5 min at 125C. The signal intensity was found…
Both hexagonal wurtzite and cubic zinc blend GaN phases were synthesized in GaAs by 50 keV N+ implantation at 400 deg C and subsequent annealing at 900 deg C for 15 min in N2 ambient. Crystallographic structural and Raman scattering studies…
Germanium-tin (GeSn) photodiodes potentiate a viable solution to integrate SWIR and extended SWIR detection technology into CMOS processing line. However, challenges in the growth of thick, high quality GeSn limit the device absorber…
The photo-luminescence features of Ge-oxygen defect centers in a 100nm thick Ge-doped silica film on a pure silica substrate were investigated by looking at the emission spectra and time decay detected under synchrotron radiation excitation…
A process for growing gallium nitride (GaN) vertical p-i-n homojunctions on (111) silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD) was developed, and a triple mesa etch technique was used to fabricate efficient…
We report a laser wakefield acceleration of electron beams up to 130 MeV from laser-driven 4-mm long nitrogen gas jet. By using a moderate laser intensity (3.5*10^18 W.cm^(-2)) and relatively low plasma densities (0.8*10^18 cm^(-3) to…
Silicon-based light sources including light-emitting diodes (LEDs) and laser diodes (LDs) for information transmission are urgently needed for developing monolithic integrated silicon photonics. Silicon doped by ion implantation with erbium…
The appeal of lasers can be attributed to both their ubiquitous applications and their role as model systems for elucidating nonequilibrium and cooperative phenomena. Introducing novel concepts in lasers thus has a potential for both…
Widely-tunable and narrow-linewidth integrated lasers across all visible wavelengths are necessary to enable on-chip technologies such as quantum photonics, optical trapping, and biophotonics. However, such lasers have not been realized due…