Related papers: Electrically injected GeSn lasers on Si operating …
Efficient and cost-effective Si-compatible lasers are a long standing wish of the optoelectronic industry. In principle, there are two options. For many applications, lasers based on III-V compounds provide compelling solutions, even if the…
Recent research focused on single photon emitters (SPEs) hosted by layered semiconductors, particularly hexagonal boron nitride (hBN), has revealed a promising alternative to quantum dots (QDs) for generating single, indistinguishable…
Metal-halide perovskites are promising lasing materials for realization of monolithically integrated laser sources, the key components of silicon photonic integrated circuits (PICs). Perovskites can be deposited from solution and require…
A recombination radiation line of electron-hole plasma, observed in electroluminescence spectra of tunneling silicon MOS diodes, has been investigated at the temperature > 300 K. The internal quantum efficiency of the luminescence, equal to…
Topological insulator lasers (TILs) are a recently introduced family of lasing arrays in which phase locking is achieved through synthetic gauge fields. These single frequency light source arrays operate in the spatially extended edge modes…
Nanolasers have great potential as both on-chip light sources and optical barcoding particles. We demonstrate ultrasmall InGaP and InGaAsP disk lasers with diameters down to 360 nm (198 nm in height) in the red spectral range. Optically…
On-chip light sources are critical for the realization of fully integrated photonic circuitry. So far, semiconductor miniaturized lasers have been mainly limited to sizes on the order of a few microns. Further reduction of sizes is…
We demonstrate an electrically driven compact hybrid lithium niobate microring laser by butt coupling a commercial 980-nm pump laser diode chip with a high quality Er3+-doped lithium niobate microring chip. Single mode lasing emission at…
A laser threshold is determined by the gain condition, which has been progressively reduced by the use of heterostructures and of quantum confinement. The polariton laser is the ultimate step of this evolution: coherent emission is obtained…
A holmium-doped yttrium aluminum garnet (Ho:YAG) thin-disk was experimentally investigated under Q-switching and cavity-dumping operation schemes, pumped by a 1.9 $\mu$m laser-diode (LD). The laser generated pulses at 2090 nm with energies…
The ionization of xenon atoms subjected to 42fs, 800nm pulses of radiation from a Ti:Sapphire laser was investigated. In our experiments a maximum laser intensity of $\sim2\times 10^{15} \textrm{W}/\textrm{cm}^2$ was used. Xenon ions were…
The method of software analysis of high-resolution TEM images using the peak pairs algorithm in combination with Raman spectroscopy was employed to study lattice deformations in Ge/Si(001) structures with low-temperature Ge quantum dots. It…
Hybrid integrated semiconductor laser sources offering extremely narrow spectral linewidth as well as compatibility for embedding into integrated photonic circuits are of high importance for a wide range of applications. We present an…
In this paper, we present an analysis for treating the spectroscopic ellipsometry response of Si/Ge superlattices (SL) with embedded Ge dots. Spectroscopic ellipsometry (SE) measurement at room temperature was used to investigate optical…
In simulations of a 10PW laser striking a solid we demonstrate the possibility of producing a pure electron-positron plasma by the same processes as those thought to operate in high-energy astrophysical environments. A maximum positron…
Using a high-Q diamond microresonator (Q > 300,000) interfaced with high-power-handling directly-written doped-glass waveguides, we demonstrate a Raman laser in an integrated platform pumped in the near-visible. Both TM-to-TE and TE-to-TE…
Reaching lasing in electrically pumped microdevices based on solution-processed semiconductors poses a major scientific and technological challenge. Halide perovskites offer a promising platform for electrical injection, since their…
Hybrid plasmonic lasers provide deep subwavelength optical confinement, strongly enhanced light-matter interaction and together with nanoscale footprint promise new applications in optical communication, bio-sensing and photolithography.…
We describe the operation of two GaN-based diode lasers for the laser spectroscopy of gallium at 403 nm and 417 nm. Their use in an external cavity configuration enabled the investigation of absorption spectroscopy in a gallium hollow…
We present measurements of integrated electron energies produced by above-threshold ionization (ATI) of neon in a laser field with intensity exceeding 10$^{20}$ W/cm$^{2}$. We observe electrons with energy exceeding 10 MeV ejected in the…