Related papers: Electrically injected GeSn lasers on Si operating …
Plasmonic nanolasers have received a substantial interest for their promising applications in integrated photonics, optical sensing, and biomedical imaging. To date, a room-temperature plasmonic nanolaser, submicron in all dimensions,…
We present GaSb-based interband cascade lasers emitting at a center wavelength of 6.12 $\mu$m at 20$^\circ$C in continuous-wave operation up to a maximum operating temperature of 40$^\circ$C. Pulsed measurements based on broad area devices…
We demonstrate an external cavity laser with intrinsic linewidth below 100 Hz around an operating wavelength of 852 nm, selected for its relevance to laser cooling and manipulation of cesium atoms. This system achieves a maximum CW output…
Chalcogenide glass (ChG) is an attractive material for integrated nonlinear photonics due to its wide transparency and high nonlinearity, and its capability of being directly deposited and patterned on Silicon wafer substrates. It has a…
Erbium (Er) ions are the gain medium of choice for fiber-based amplifiers and lasers, offering a long excited-state lifetime, slow gain relaxation, low amplification nonlinearity and noise, and temperature stability compared to…
We report on experimental observation of laser-like emission from a periodic all-silicon nanostructure formed on an electronic grade silicon-on-insulator wafer, using a highly-uniform hexagonal self-organized array of nanopores as an etch…
Experimental results for the reflection coefficient of shock-compressed dense Xenon plasmas at pressures of 1.6 - 17 GPa and temperatures around 30 000 K using a laser beam with \lambda = 1.06 10^-6 m are compared with calculations based on…
Avalanche photodiodes used for greenhouse gas sensing often use a mesa-structure that suffers from high surface leakage currents and edge breakdown. In this paper, we report 2-micron InGaAs/GaAsSb superlattice (SL) based planar PIN diodes…
GeSn epitaxial heterostructures are emerging as prominent candidates for the monolithic integration of light sources on Si substrates. Here we propose a judicious explanation for their temperature-dependent photoluminescence (PL) that is…
We describe a teaching-lab experiment that applies basic optical spectroscopy to examine the physics of semiconductor diode lasers. By using a low-power visible laser, this experiment is suitable for use in an open lab environment, where…
We report on a passively mode-locked Tm, Ho:CLNGG laser operating at 2090 nm, pumped by a multimode fiber-coupled 793 nm laser diode, representing the first demonstration of an affordable diode-pumped sub-100-fs mode-locked laser in the…
A laser can be understood as thermodynamic engine converting heat to a coherent single mode field close to Carnot efficiency. From this perspective spectral shaping of the excitation light generates a higher effective temperature on the…
The interest in using the radiation detectors based on high resistive chromium-compensated GaAs (GaAs:Cr) in high energy physics and others applied fields has been growing steadily due to its numerous advantages over others classical…
We demonstrate a C-band wavelength-tunable microlaser with an Er3+ doped high quality (~1.02x10^6) lithium niobate microdisk resonator. With a 976 nm continuous-wave pump laser, lasing action can be observed at a pump power threshold as low…
Here, we report the full-fledged journey towards the material synthesis and characterization of few-layered/thin WSe$_2$ using sputtered W-films on SiO$_2$/Si substrates followed by electrical studies under dark and illumination conditions.…
This study presents a fabrication process for lithium-drifted silicon (Si(Li)) detectors that, compared to previous methods, allows for mass production at a higher yield, while providing a large sensitive area and low leakage currents at…
We generate 555.8nm light with sub-MHz linewidth through the use of laser injection-locking of a semiconductor diode at 1111.6nm, followed by frequency doubling in a resonant cavity. The integrity of the injection lock is investigated by…
To take fully advantage of Junctionless transistor (JLT) low-cost and low-temperature features we investigate a 475 degC process to create onto a wafer a thin poly-Si layer on insulator. We fabricated a 13nm doped (Phosphorous, 1E19 at/cm3)…
Lasers that operate in the visible wavelength range and can be easily integrated on a chip together with photonic integrated circuits are of particular interest for biophotonic applications. We present a new class of laser sources that emit…
On-chip coherent laser sources are crucial for the future of photonic integrated circuits, yet progress has been hindered by the complex interplay between material quality, device geometry, and performance metrics. We combine…