Related papers: Electrically injected GeSn lasers on Si operating …
Mode-locked lasers are of interest for applications such as biological imaging, non-linear frequency conversion, and single-photon generation. In the infrared, chip-integrated mode-locked lasers have been demonstrated through integration of…
In this work, a unified numerical model is used to determine the melting thresholds and to investigate early stages of melting of several crystalline semiconductors (Si, Ge, GaAs, CdTe and InP) irradiated by nanosecond laser pulses. A…
Strain engineering has been a ubiquitous paradigm to tailor the electronic band structure and harness the associated new or enhanced fundamental properties in semiconductors. In this regard, semiconductor membranes emerged as a versatile…
We report on the generation of 500 mW of spectrally pure laser light at the 460.86 nm transition used for laser cooling of strontium atoms. To this end we inject a high power single mode laser diode with light from a stabilized extended…
Ultrathin microscale resistive thermometers are of key value to many applications. Here we have fabricated a laser machined 50 ${\mu}$m wide and 50 nm thick serpentine Pt thin film sensor capable of sensing temperatures up to 650 ${^\circ}$…
Thermophotovoltaic (TPV) cells are increasingly attractive for applications in industrial waste heat harvesting, aerospace energy management, and compact power generation. Deploying midwave-infrared (MWIR) TPV in practical applications…
We report the generation of MeV temperature electrons using sub-terawatt laser systems with a liquid methanol jet as a target. Remarkably, even at laser intensities of 1016W/cm2, liquid cylindrical (2D) 15 micron methanol jets produce…
Integrated on-chip microdisk lasers have attracted great attention as a light source of compact size, low lasing threshold and narrow bandwidth. However, challenges remain unresolved in terms of single mode operation at high output power…
With the aim of investigating the possible integration of opto-electronic devices, epitaxial GaN layers have been grown on Si(111) SOI and on Si/CoSi2/Si(111) using metalorganic chemical vapor deposition. The samples are found to possess a…
A key component for optical on-chip communication is an efficient light source. However, to enable low energy per bit communication and local integration with Si CMOS, devices need to be further scaled down. In this work, we fabricate…
An ultracold electron source based on near-threshold photoionization of a laser-cooled and trapped atomic gas is presented in this work. Initial DC acceleration to $\sim$10 keV and subsequent acceleration of the created bunches to 100 keV…
We have fabricated light emitting diodes (LEDs) with Schottky contacts on Si-nanocrystals formed by simple techniques as used for standard Si devices. Orange electroluminescence (EL) from these LEDs could be seen with the naked eye at room…
In this Letter, we report the observation of electroluminescence (EL) at around 866 nm from n-i-n unipolar (electron-transporting) III-V GaAs nanoLEDs. The devices consist of nanopillars with top diameter of 166 nm, arranged in a 10x10…
Synthetic single-crystal diamond has recently emerged as a promising platform for Raman lasers at exotic wavelengths due to its giant Raman shift, large transparency window and excellent thermal properties yielding a greatly enhanced…
Mid-infrared silicon photonics has recently emerged as a new technology for a wide range of applications such as optical communication, lidar, and bio-sensing. One key component enabling this technology is the mid-infrared optical modulator…
We present two compact ultrafast electron injector designs with integrated focusing that provide high peak brightness of up to $1.9*10^{12} A/m^2Sr^2$ with 10s of electrons per laser pulse using silicon carbide electrodes and silicon…
We report on the design, installation, and test of an experimental facility for the production of ultra-cold atomic isotopes and isomers of cesium. The setup covers a broad span of mass numbers and nuclear isomers, allowing one to directly…
Germanium-Tin (GeSn) semiconductors are promising for mid-infrared optoelectronics owing to their silicon compatibility, tunable bandgap, and potential for room-temperature operation. Released GeSn membranes provide an additional degree of…
Coherent laser arrays compatible with silicon photonics are demonstrated in a waveguide geometry in epitaxially grown semiconductor membrane quantum well lasers transferred on substrates of silicon carbide and oxidised silicon; we record…
Silicon photonics in the near-Infra-Red, up to 1.6 um, is already one of key technologies in optical data communications, particularly short-range. It is also being prospected for applications in quantum computing, artificial intelligence,…