Electroluminescence in n-type GaAs unipolar nanoLEDs

Bejoys Jacob; João Azevedo; Jana B. Nieder; Bruno Romeira

doi:10.1364/OL.546063

Electroluminescence in n-type GaAs unipolar nanoLEDs

Applied Physics 2025-01-20 v1 Emerging Technologies Optics

Authors: Bejoys Jacob , João Azevedo , Jana B. Nieder , Bruno Romeira

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Abstract

In this Letter, we report the observation of electroluminescence (EL) at around 866 nm from n-i-n unipolar (electron-transporting) III-V GaAs nanoLEDs. The devices consist of nanopillars with top diameter of 166 nm, arranged in a 10x10 pillar array. Hole generation through impact ionization and Zener tunnelling is achieved by incorporating an AlAs/GaAs/AlAs double-barrier quantum well within the epilayer structure of the n-i-n diode. Time-resolved EL measurements reveal decay lifetimes larger than 300 ps, allowing us to estimate an internal quantum efficiency (IQE) higher than 2 per cent at sub-mA current injection. These results demonstrate the potential for a new class of n-type nanoscale light-emitting devices.

Keywords

electroluminescence GaAs nanoLED n-type device quantum well internal quantum efficiency impact ionization

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@article{arxiv.2501.10142,
  title  = {Electroluminescence in n-type GaAs unipolar nanoLEDs},
  author = {Bejoys Jacob and João Azevedo and Jana B. Nieder and Bruno Romeira},
  journal= {arXiv preprint arXiv:2501.10142},
  year   = {2025}
}

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7 pages, 5 figures, 7 suplementary figures

Electroluminescence in n-type GaAs unipolar nanoLEDs

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