Growth and optical properties of GaN/AlN quantum wells

C. Adelmann; E. Sarigiannidou; D. Jalabert; Y. Hori; J. -L. Rouviere; B. Daudin; S. Fanget; C. Bru-Chevallier; T. Shibata; M. Tanaka

doi:10.1063/1.1581386

Growth and optical properties of GaN/AlN quantum wells

Materials Science 2009-11-10 v1

Authors: C. Adelmann , E. Sarigiannidou , D. Jalabert , Y. Hori , J. -L. Rouviere , B. Daudin , S. Fanget , C. Bru-Chevallier , T. Shibata , M. Tanaka

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Abstract

We demonstrate the growth of GaN/AlN quantum well structures by plasma-assisted molecular-beam epitaxy by taking advantage of the surfactant effect of Ga. The GaN/AlN quantum wells show photoluminescence emission with photon energies in the range between 4.2 and 2.3 eV for well widths between 0.7 and 2.6 nm, respectively. An internal electric field strength of $9.2\pm 1.0$ MV/cm is deduced from the dependence of the emission energy on the well width.

Keywords

GaN/AlN quantum wells molecular beam epitaxy photoluminescence internal electric field band gap

Cite

@article{arxiv.cond-mat/0304124,
  title  = {Growth and optical properties of GaN/AlN quantum wells},
  author = {C. Adelmann and E. Sarigiannidou and D. Jalabert and Y. Hori and J. -L. Rouviere and B. Daudin and S. Fanget and C. Bru-Chevallier and T. Shibata and M. Tanaka},
  journal= {arXiv preprint arXiv:cond-mat/0304124},
  year   = {2009}
}

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