Related papers: Electrically injected GeSn lasers on Si operating …
We present a versatile, large-scale fabrication method for nanostructured semiconducting junctions. Silicon substrates were processed by femtosecond laser pulses in methanol and a quasi-ordered distribution of columnar nanospikes was formed…
Si/SiGe heterostructures are of high interest for high mobility transistor and qubit applications, specifically for operations below 4.2 K. In order to optimize parameters such as charge mobility, built-in strain, electrostatic disorder,…
The primary challenge in silicon photonics is achieving efficient luminescence in the communication band, crucial for its large-scale application. Despite significant efforts, silicon light sources still suffer from low efficiency and…
We at RRCAT have recently developed high power laser diodes in the wavelength range of 740 to 1000 nm. A typical semiconductor laser structure is consisted of about 10 epilayers with different composition, thickness and doping values. For…
The Interface Region Imaging Spectrograph (IRIS) routinely observes the Si IV resonance lines. When analyzing observations of these lines it has typically been assumed they form under optically thin conditions. This is likely valid for the…
Portable mid-infrared (mid-IR) spectroscopy and sensing applications require widely tunable, narrow linewidth, chip-scale, single-mode sources without sacrificing significant output power. However, no such lasers have been demonstrated…
We present an approach to fabrication and packaging of integrated photonic devices that utilizes waveguide and detector layers deposited at near-ambient temperature. All lithography is performed with a 365 nm i-line stepper, facilitating…
Nanostructured topological insulators (TIs) have the potential to impact a wide array of condensed matter physics topics, ranging from Majorana physics to spintronics. However, the most common TI materials, the Bi$_2$Se$_3$ family, are…
The development of Si-compatible active photonic devices is a high priority in computer and modern electronics industry. Ge is compatible with Si and is a promising light emission material. Nearly all Ge-on-Si materials reported so far were…
A new platform for fabricating polariton lasers operating at room temperature is introduced: nitride-based distributed Bragg reflectors epitaxially grown on patterned silicon substrates. The patterning allows for an enhanced strain…
The GanESS experiment will exploit the high-pressure noble gas time projection chamber technology to detect coherent elastic neutrino-nucleus scattering (CE$\nu$NS) at the European Spallation Source (ESS). The detector, able to operate at…
Integrated semiconductor mode-locked lasers have shown promise in many applications and are readily fabricated using generic InP photonic integration platforms. However, the passive waveguides offered in such platforms have relatively high…
We present a method for producing three-dimensional Bose-Einstein condensates using only laser cooling. The phase transition to condensation is crossed with $2.5 {\times} 10^{4}$ $^{87}\mathrm{Rb}$ atoms at a temperature of $T_{\mathrm{c}}…
SiGeSn-based optoelectronic devices, which operate across a broad infrared wavelength range, have attracted significant attention, particularly heterostructures utilizing quantum wells are widely utilized. In these structures, band…
We present a study of the morphology and the thermoelectric properties of short-pulse laser-sintered (LS) nanoparticle (NP) thin films, consisting of SiGe alloy NPs or composites of Si and Ge NPs. Laser-sintering of spin-coated NP films in…
Visible-spectrum photonic integrated circuits (PICs) present compact and scalable solutions for emerging technologies including quantum computing, biosensing, and virtual/augmented reality. Realizing their full potential requires the…
The cross-plane thermal conductivity of a type II InAs/GaSb superlattice (T2SL) is measured from 13 K to 300 K using the 3{\omega} method. Thermal conductivity is reduced by up to 2 orders of magnitude relative to the GaSb bulk substrate.…
Resistively guiding laser-generated fast electron beams in targets consisting of a resistive wire embedded in lower $Z$ material should allow one to rapidly heat the wire to over 100eV over a substantial distance without strongly heating…
We report the first direct femtosecond laser-writing of buried channel waveguides in monocrystalline ZnS. We also report the first single-mode Cr:ZnS depressed cladding buried waveguide laser manufactured by femtosecond laser writing. The…
Integration of optical interconnects with silicon-based electronics can address the growing limitations facing chip-scale data transport as microprocessors become progressively faster. However, material lattice mismatch and incompatible…