A new platform for fabricating polariton lasers operating at room temperature is introduced: nitride-based distributed Bragg reflectors epitaxially grown on patterned silicon substrates. The patterning allows for an enhanced strain relaxation thereby enabling to stack a large number of crack-free AlN/AlGaN pairs and achieve cavity quality factors of several thousands with a large spatial homogeneity. GaN and ZnO active regions are epitaxially grown thereon and the cavities are completed with top dielectric Bragg reflectors. The two structures display strong-coupling and polariton lasing at room temperature and constitute an intermediate step in the way towards integrated polariton devices.
@article{arxiv.1404.7743,
title = {Patterned silicon substrates: a common platform for room temperature GaN and ZnO polariton lasers},
author = {J. Zuniga-Perez and E. Mallet and R. Hahe and M. J. Rashid and S. Bouchoule and C. Brimont and P. Disseix and J. Y. Duboz and G. Gommé and T. Guillet and O. Jamadi and X. Lafosse and M. Leroux and J. Leymarie and Feng Li and F. Réveret and F. Semond},
journal= {arXiv preprint arXiv:1404.7743},
year = {2015}
}