Laser-sintered thin films of doped SiGe nanoparticles

Benedikt Stoib; Tim Langmann; Sonja Matich; Tobias Antesberger; Niklas Stein; Sebastian Angst; Nils Petermann; Roland Schmechel; Gabi Schierning; Dietrich E. Wolf; Hartmut Wiggers; Martin Stutzmann; Martin S. Brandt

doi:10.1063/1.4726041

Laser-sintered thin films of doped SiGe nanoparticles

Materials Science 2015-06-03 v1 Mesoscale and Nanoscale Physics

Authors: Benedikt Stoib , Tim Langmann , Sonja Matich , Tobias Antesberger , Niklas Stein , Sebastian Angst , Nils Petermann , Roland Schmechel , Gabi Schierning , Dietrich E. Wolf , Hartmut Wiggers , Martin Stutzmann , Martin S. Brandt

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Abstract

We present a study of the morphology and the thermoelectric properties of short-pulse laser-sintered (LS) nanoparticle (NP) thin films, consisting of SiGe alloy NPs or composites of Si and Ge NPs. Laser-sintering of spin-coated NP films in vacuum results in a macroporous percolating network with a typical thickness of 300 nm. The Seebeck coefficient is independent of the sintering process and typical for degenerate doping. The electrical conductivity of LS films rises with increasing temperature, best described by a power-law and influenced by two-dimensional percolation effects.

Keywords

laser sintering SiGe nanoparticles thin films thermoelectric properties Seebeck coefficient electrical conductivity percolation effects

Cite

@article{arxiv.1201.4370,
  title  = {Laser-sintered thin films of doped SiGe nanoparticles},
  author = {Benedikt Stoib and Tim Langmann and Sonja Matich and Tobias Antesberger and Niklas Stein and Sebastian Angst and Nils Petermann and Roland Schmechel and Gabi Schierning and Dietrich E. Wolf and Hartmut Wiggers and Martin Stutzmann and Martin S. Brandt},
  journal= {arXiv preprint arXiv:1201.4370},
  year   = {2015}
}

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4 pages, 4 figures

Laser-sintered thin films of doped SiGe nanoparticles

Abstract

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