Si doping on MgB2 thin films by pulsed laser deposition

Y. Zhao; M. Ionescu; J. Horvat; A. H. Li; S. X. Dou

Si doping on MgB2 thin films by pulsed laser deposition

Superconductivity 2007-05-23 v2

Authors: Y. Zhao , M. Ionescu , J. Horvat , A. H. Li , S. X. Dou

Abstract

A series of MgB2 thin films were fabricated by pulsed laser deposition (PLD), doped with various amounts of Si up to a level of 18wt%. Si was introduced into the PLD MgB2 films by sequential ablation of a stoichiometric MgB2 target and a Si target. The doped films were deposited at 250 C and annealed in situ at 685 C for 1min. Up to a Si doping level of ~11wt%, the superconducting transition temperature (Tc) of the film does not change significantly, as compared to the control, undoped film. The magnetic critical current density (Jc) of the film at 5K was increased by 50% for a Si doping level of ~3.5wt%, as compared to the control film. Also, the irreversibility field of Si-doped MgB2 films (Hirr) at low temperature is higher than for the undoped film.

Keywords

MgB2 thin films pulsed laser deposition Si doping superconducting transition temperature magnetic critical current density

Cite

@article{arxiv.cond-mat/0311055,
  title  = {Si doping on MgB2 thin films by pulsed laser deposition},
  author = {Y. Zhao and M. Ionescu and J. Horvat and A. H. Li and S. X. Dou},
  journal= {arXiv preprint arXiv:cond-mat/0311055},
  year   = {2007}
}

Comments

7 pages, 7 figures; typos corrected in Figure 5

Si doping on MgB2 thin films by pulsed laser deposition

Abstract

Keywords

Cite

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