Nanogranular MgB2 thin films on SiC buffered Si substrates prepared by in-situ method

S. Chromik; J. Huran; V. Strbik; M. Spankova; I. Vavra; W. Bohne; J. Rohrich; E. Strub; P. Kovac; S. Stancek

doi:10.1088/0953-2048/19/6/027

Nanogranular MgB2 thin films on SiC buffered Si substrates prepared by in-situ method

Superconductivity 2009-11-11 v1 Materials Science

Authors: S. Chromik , J. Huran , V. Strbik , M. Spankova , I. Vavra , W. Bohne , J. Rohrich , E. Strub , P. Kovac , S. Stancek

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Abstract

MgB2 thin films were deposited on SiC buffered Si substrates by sequential electron beam evaporation of B-Mg bilayer followed by in-situ annealing. The application of a SiC buffer layer enables the maximum annealing temperature of 830 C. The Transmission Electron Microscopy analysis confirms the growth of a nanogranular MgB2 film and the presence of a Mg2Si compound at the surface of the film. The 150-200 nm thick films show a maximum zero resistance critical temperature TC0 above 37 K and a critical current density JC ~ 106 A/cm2 at 11K.

Keywords

MgB2 thin films SiC buffer layer nanogranular in-situ annealing critical temperature critical current density

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@article{arxiv.cond-mat/0507519,
  title  = {Nanogranular MgB2 thin films on SiC buffered Si substrates prepared by in-situ method},
  author = {S. Chromik and J. Huran and V. Strbik and M. Spankova and I. Vavra and W. Bohne and J. Rohrich and E. Strub and P. Kovac and S. Stancek},
  journal= {arXiv preprint arXiv:cond-mat/0507519},
  year   = {2009}
}

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7 pages, 6 figures, submitted to Applied Physics Letters

Nanogranular MgB2 thin films on SiC buffered Si substrates prepared by in-situ method

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