Very thick, ~ 40 μm, clean, and highly textured MgB2 film was effectively grown on an Al2O3 substrate. The fabrication technique is by the hybrid physical-chemical vapor deposition (HPCVD) using B2H6 gas and Mg ingot as the sources. The X-ray diffraction (XRD) analysis shows a highly (101)-oriented MgB2 crystal structure without any impurity detected. There is no signal from the substrate in the XRD spectrum, indicating that the film thickness exceeds the X-ray penetration length. Scanning electron microscopy (SEM) reveals that the film is composed of highly-packed MgB2 micro-crystals with a uniform size distribution of about 2 μm in diameter and 0.2 μm in thickness. According to the compositional analysis of energy-dispersive X-ray spectroscopy (EDX), no oxygen, hence no MgO, exists in the textured film, consistent with the XRD result. Also, the transport properties are similar to those of a single crystal, indicating a clean film of good crystallite. The zero field transition temperatures are determined as TC(onset) = 39.2 K and TC(zero) = 38.4 K, giving a sharp transition typical of a clean sample. The residual resistivity ratio (RRR) is determined as 6.4 and the magnetoreisitance (MR) is about 28 % at 40 K under the applied field of 9 T, which are similar to those of a single crystal. The zero temperature upper critical field, HC2(0), is extrapolated as 19 T from the TC(onset) at applied field up to 9 T.
@article{arxiv.cond-mat/0406325,
title = {Thick MgB2 film with (101) oriented micro-crystals},
author = {Chinping Chen and Xinfeng Wang and Ying Lu and Zhang Jia and Jing-pu Guo and Xiao-nan Wang and Meng Zhu and Xiangyu Xu and Jun Xu and Qing-rong Feng},
journal= {arXiv preprint arXiv:cond-mat/0406325},
year = {2009}
}