Hybrid integrated semiconductor lasers with silicon nitride feedback circuits
Optics
2020-01-03 v2 Applied Physics
Abstract
Hybrid integrated semiconductor laser sources offering extremely narrow spectral linewidth as well as compatibility for embedding into integrated photonic circuits are of high importance for a wide range of applications. We present an overview on our recently developed hybrid-integrated diode lasers with feedback from low-loss silicon nitride (Si3N4 in SiO2) circuits, to provide sub-100-Hz-level intrinsic linewidths, up to 120 nm spectral coverage around 1.55 um wavelength, and an output power above 100 mW. We show dual-wavelength operation, dual-gain operation, laser frequency comb generation, and present work towards realizing a visible-light hybrid integrated diode laser.
Cite
@article{arxiv.1911.10820,
title = {Hybrid integrated semiconductor lasers with silicon nitride feedback circuits},
author = {Klaus-J. Boller and Albert van Rees and Youwen Fan and Jesse Mak and Rob E. M. Lammerink and Cornelis A. A. Franken and Peter J. M. van der Slot and David A. I. Marpaung and Carsten Fallnich and Jörn P. Epping and Ruud M. Oldenbeuving and Dimitri Geskus and Ronald Dekker and Ilka Visscher and Robert Grootjans and Chris G. H. Roeloffzen and Marcel Hoekman and Edwin J. Klein and Arne Leinse and René G. Heideman},
journal= {arXiv preprint arXiv:1911.10820},
year = {2020}
}
Comments
25 pages, 16 figures