Semicoductor-metallic hybrid nano-disk laser
Abstract
In this research, semiconductor-metallic hybrid nano-disk laser based on InGaAsP multi quantum wells (MQWs) or InGaAs bulk material membranes were designed, fabricated and characterized. The quality factors of surface-plasmon-polariton (SPP) modes can be improved by introducing a transparent dielectric shield layer between the metallic cap and the gain material. The InGaAsP MQWs based semiconductor-metallic hybrid nano-laser can surpport SPP mode lasing at room temperature. With diameter of 600 nm, the lasing mode is TM-like SPP mode. Under high pumping, for nano-laser, the quantized levels in the wells and the barrier are populated. This behavior supported multi-mode lasing. The InGaAs bulk material based semiconductor-metallic hybrid nano-laser perform that the carrier density saturated the energy band and populated the higher band as well. The nano-laser also supports multi-mode lasing at room temperature. At loe temperature of 77K, the nano-laser with 400 nm diameter can support TE-like SPP mode lasing.
Cite
@article{arxiv.2310.00007,
title = {Semicoductor-metallic hybrid nano-disk laser},
author = {Taiping Zhang},
journal= {arXiv preprint arXiv:2310.00007},
year = {2023}
}
Comments
in CHeinese language