Related papers: Light-effect transistor (LET) with multiple indepe…
Light emitting diodes (LEDs) were fabricated using ensembles of free-standing (In,Ga)N/GaN nanowires (NWs) grown on Si substrates in the self-induced growth mode by molecular beam epitaxy. Electron beam induced current analysis,…
Field-effect transistors (FETs) with single gates are adversely affected by short channel effects such as drain-induced barrier lowering (DIBL) and increases in the magnitude of sub-threshold swing as the channel length is reduced.…
The polarization of optical fields is a crucial degree of freedom in the all-optical analogue of electromagnetically induced transparency (EIT). However, the physical origins of EIT and polarization induced phenomena have not been well…
Optical illumination of quantum-dot qubit devices at cryogenic temperatures, while not well studied, is often used to recover operating conditions after undesired shocking events or charge injection. Here, we demonstrate systematic…
A light-emitting-diodes (LEDs)-integrated silicon carbide (SiC) insulated gate bipolar transistors (LI-IGBT) is proposed in this paper. The novelty of the LI-IGBT depends on the photogeneration effect of III-nitride LEDs embedded in the…
Lighting and display, relying on electric and optical down-conversion emission with sluggish power efficiency, account for >15% global electricity consumption1,2. In 2014, quantum-dot (QD) LEDs (QLEDs) with near-optimal external quantum…
The development of high-performance multifunctional polymer-based electronic circuits is a major step towards future flexible electronics. Here, we demonstrate a tunable approach to fabricate such devices based on rationally designed…
In the past two decades another transistor based on conducting polymers, called the organic electrochemical transistor (ECT) was shown and largely studied. The main difference between organic ECTs and FETs is the mode and extent of channel…
We demonstrate the proof of principle for a ternary adder using silicon metal-on-insulator single electron transistors (SET). Gate dependent rectifying behavior of a single electron transistor results in a robust three-valued output as a…
The much sought after optical transistor --the photonic counterpart of the electronic transistor-- is poised to become a central ingredient in the development of optical signal processing. The motivation for using photons rather than…
Graphene has attracted enormous interests due to its unique physical, mechanical, and electrical properties. Specially, graphene-based field-effect transistors (FETs) have evolved rapidly and are now considered as an option for conventional…
We report on the fabrication and characterization of single crystal field-effect transistors (FETs) based on diphenylbenzo diselenophene (DPh-BDSe). These organic field-effect transistors (OFETs) function as p-channel accumulation-mode…
The coupling of electronic degrees of freedom in materials to create hybridized functionalities is a holy grail of modern condensed matter physics that may produce novel mechanisms of control. Correlated electron systems often exhibit…
We employ a non-linear sigma model defined on a Keldysh contour to study the current and the current noise in a diffusive micro-bridge in the presence of electron-electron interactions. Out of equilibrium the fluctuation-dissipation theorem…
We report the performance of field-effect transistors (FETs), comprised of mono-layer of recently synthesized layered two-dimensional MoSi2N_4 as channel material, using the first principles quantum transport simulations. The devices'…
A common issue in low temperature measurements of enhancement-mode metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high contact resistance dominating the device impedance. In that…
Tunneling field-effect transistors (TFETs) based on 2D materials are promising steep sub-threshold swing (SS) devices due to their tight gate control. There are two major methods to create the tunnel junction in these 2D TFETs: electrical…
Which systems are ideal to obtain negative refraction with no absorption? Electromagnetically induced transparency (EIT) is a method to suppress absorption and make a material transparent to a field of a given frequency. Such a system has…
Inspired by the striking similarities between the metal-insulator transitions in graphite and Si-MOSFET's and the recent attention to charge doping in carbon-based materials, we have made attempts to fabricate a field-effect transistor…
New configuration of confinement structure is utilized to improve optoelectronic performances, including threshold current, AC current gain as well as optical bandwidth and optical output power of single quantum well transistor laser.…