Related papers: Light-effect transistor (LET) with multiple indepe…
We give a detailed discussion of the Quantum Interference Effect Transistor (QuIET), a proposed device which exploits interference between electron paths through aromatic molecules to modulate current flow. In the off state, perfect…
We fabricated ambipolar field-effect transistors (FETs) from multi-layered triclinic ReSe2, mechanically exfoliated onto a SiO2 layer grown on p-doped Si. In contrast to previous reports on thin layers (~2 to 3 layers), we extract…
Molecular transistors have the potential for switching with lower gate voltages than conventional field-effect transistors. We have calculated the performance of a single-molecule device in which there is interference between electron…
In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 {\mu}A/{\mu}m…
In this paper we propose a modified structure of TFET incorporating ferroelectric oxide as the complementary gate dielectric operating in negative capacitance zone, called the Negative Capacitance Tunnel FET (NCTFET). The proposed device…
We propose and numerically simulate novel reconfigurable logic gates employing spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs). The output characteristics of the spin MOSFETs depend on the relative magnetization…
Coherent interaction of laser radiation with multilevel atoms and molecules can lead to quantum interference in the electronic excitation pathways. A prominent example observed in atomic three-level-systems is the phenomenon of…
We propose an architecture for achieving high-fidelity deterministic quantum logic gates on dual-rail encoded photonic qubits by letting photons interact with a two-level emitter (TLE) inside an optical cavity. The photon wave packets that…
The idea of implementing electroluminescence-based amplification through transparent multi-hole structures (FAT-GEMs) has been entertained for some time. Arguably, for such a technology to be attractive it should perform at least at a level…
We determine the optical response of a thin and dense layer of interacting quantum emitters. We show that in such a dense system, the Lorentz redshift and the associated interaction broadening can be used to control the transmission and…
A simple laser scribing process has been developed to fabricate low-voltage junctionless in-plane-gate thin-film transistors (TFTs) arrays without any mask and photolithography. Such junctionless TFTs feature that the channel and the…
Conversion of solar energy with high quantum efficiencies is a key challenge in energy technologies. Excitation energy transfer (EET) mechanisms, such as F\"orster resonance energy transfer (FRET), play a crucial role in facilitating…
In a uniform, source-free, and unbounded medium, Maxwell's equations require electromagnetic waves to be purely transverse. However, when a beam of light is tightly focused or strongly confined, a longitudinal field component can emerge.…
We report on fabrication of novel field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically…
Funtionalized pentacene, 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene), field-effect transistors(FET's) were made by thermal evaporation or solution deposition method and the mobility was measured as a function of temperature…
Physical challenges at the device and interconnect level limit both network and computing energy efficiency. While photonics is being considered to address interconnect bottlenecks, optical routing is still limited by electronic circuitry,…
Emerging two-dimensional (2D) magnetic semiconductors represent transformative platforms to explore magneto-optics and opto-spintronic applications. Though 2D opto-spintronics has attracted tremendous research efforts in spin-dependent…
The single electron transistor (SET) offers unparalled opportunities as a nano-scale electrometer, capable of measuring sub-electron charge variations. SETs have been proposed for read-out schema in solid-state quantum computing where…
Recently, short channel effects (SCE) and power consumption dissipation problems pose big challenges which need imperative actions to be taken to deal with for field effect transistor to further scale down as semiconductor technology enters…
Advanced electronic device technologies require a faster operation and smaller average power consumption, which are the most important parameters in very large scale integrated circuit design. The conventional Complementary Metal-Oxide…