Related papers: Light-effect transistor (LET) with multiple indepe…
The bandgap dependence on the number of atomic layers of some families of 2D-materials, can be exploited to engineer and use lateral heterostructures (LHs) as high-performance Field-Effect Transistors (FET). This option can provide very…
The field effect in metal-oxide-semiconductor (MOS) capacitors plays a key role in field-effect transistors (FETs), which are the fundamental building blocks of modern digital integrated circuits. Recent works show that the field effect can…
The charge doped into a semiconductor in a field effect transistor (FET) is generally confined to the interface of the semiconductor. A planar step at the interface causes a potential drop due to the strong electric field of the FET, which…
We propose a sub-Doppler laser cooling mechanism that takes advantage of the unique spectral features and extreme dispersion generated by the phenomenon of electromagnetically induced transparency (EIT). EIT is a destructive quantum…
The unique optoelectronic properties of graphene [1] make it an ideal platform for a variety of photonic applications [2], including fast photodetectors [3], transparent electrodes [4], optical modulators [5], and ultra-fast lasers [6].…
This work investigates the use of pulse stretching inverters for monitoring the variation of flux and Linear Energy Transfer (LET) of energetic particles. The basic particle detector consists of two cascaded pulse stretching (skew-sized)…
Gate-all-around Vertical Nanowire Field Effect Transistors (VNWFET) are emerging devices, which are well suited to pursue scaling beyond lateral scaling limitations around 7nm. This work explores the relative merits and drawbacks of the…
Light-emitting electrochemical cells (LECs), thanks to their simple device structure and the tunable emission wavelength of the light-emitting layer, are emerging as a class of electrochemical device candidate for the development of…
Soft electronics are a promising and revolutionary alternative for traditional electronics when safe physical interaction between machines and the human body is required. Among various materials architectures developed for producing soft…
In this paper, we propose a novel S/D engineering for dual-gated Bilayer Graphene (BLG) Field Effect Transistor (FET) using doped semiconductors (with a bandgap) as source and drain to obtain unipolar complementary transistors. To simulate…
A new class of hybrid systems that couple optical, electrical and mechanical degrees of freedom in nanoscale devices is under development in laboratories worldwide. These nano-opto-electro-mechanical systems (NOEMS) offer unprecedented…
We report on the simple fabrication of hysteresis-free and electrically stable organic field-effect transistors (OFETs) and inverters operating at voltages <1-2 V, enabled by the almost trap-free interface between the organic semiconductor…
The electrostatic gating effects on molecular transistors are investigated using the density functional theory (DFT) combined with the nonequilibrium Green's function (NEGF) method. When molecular energy levels are away from the Fermi…
Ten years have passed since the beginning of graphene research. In this period we have witnessed breakthroughs both in fundamental and applied research. However, the development of graphene devices for mass production has not yet reached…
Exploration of new dielectrics with large capacitive coupling is an essential topic in modern electronics when conventional dielectrics suffer from the leakage issue near breakdown limit. To address this looming challenge, we demonstrate…
Inclusive electron scattering off 4He is investigated for low and medium energy and momentum transfers. The final state interaction, given by the simple semirealistic Malfliet-Tjon potential, is treated rigorously applying the Lorentz…
We propose and numerically analyze novel reconfigurable logic gates using "single-electron spin transistors" (SESTs), which are single-electron transistors (SETs) with ferromagnetic electrodes and islands. The output characteristics of a…
Recent progress in integrated-optics technology has made photonics a promising platform for quantum networks and quantum computation protocols. Integrated optical circuits are characterized by small device footprints and unrivalled…
We study the surface conductivity of a field-effect transistor (FET) made of periodic array of spherical semiconductor nanocrystals (NCs). We show that electrons introduced to NCs by the gate voltage occupy one or two layers of the array.…
A vertical partial gate carbon nanotube (CNT) field-effect transistor (FET), which is amenable to the vertical CNT growth process and offers the potential for a parallel CNT array channel, is simulated using a self-consistent atomistic…