English
Related papers

Related papers: Light-effect transistor (LET) with multiple indepe…

200 papers

Spin-polarized field-effect transistor (spin-FET), where a dielectric layer is generally employed for the electrical gating as the traditional FET, stands out as a seminal spintronic device under the miniaturization trend of electronics. It…

Materials Science · Physics 2017-03-07 Fan Li , Cheng Song , Bin Cui , Jingjing Peng , Youdi Gu , Guangyue Wang , Feng Pan

Organic light-emitting transistors (OLETs) are multifunctional optoelectronic devices that combine in a single structure the advantages of organic light emitting diodes (OLEDs) and organic field-effect transistors (OFETs). However, low…

An important consideration in miniaturizing transistors is maximizing the coupling between the gate and the semiconductor channel. A nanowire with a coaxial metal gate provides optimal gate-channel coupling, but has only been realized for…

Mesoscale and Nanoscale Physics · Physics 2012-01-19 Kristian Storm , Gustav Nylund , Lars Samuelson , Adam P. Micolich

Here we propose and analyze the behavior of a FET--like switching device, the Mott transition field effect transistor, operating on a novel principle, the Mott metal--insulator transition. The device has FET-like characteristics with a low…

Condensed Matter · Physics 2009-10-28 C. Zhou , D. M. Newns , J. A. Misewich , P. C. Pattnaik

A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron…

Mesoscale and Nanoscale Physics · Physics 2012-05-17 Benoît Roche , Benoit Voisin , Xavier Jehl , Romain Wacquez , Marc Sanquer , Maud Vinet , Veeresh Deshpande , Bernard Previtali

This paper describes the design and characteristics of monolithically integrated three-terminal gated III-Nitride light emitting diodes (LEDs) devices. The impact of channel doping and thickness on the voltage penalty of the transistor-LED…

The elegant simplicity of the device concept and the urgent need for a new "transistor" at the twilight of Moore's law have inspired many researchers in industry and academia to explore the physics and technology of negative capacitance…

Applied Physics · Physics 2019-03-12 Muhammad A. Alam , Mengwei Si , Peide D. Ye

We explore solid electrolytes for electrostatic gating using field-effect transistors (FETs) in which thin WSe$_2$ crystals are exfoliated and transferred onto a lithium-ion conducting glass ceramic substrate. For negative gate voltages…

Mesoscale and Nanoscale Physics · Physics 2018-07-25 Marc Philippi , Ignacio Gutiérrez-Lezama , Nicolas Ubrig , Alberto F. Morpurgo

The dynamic properties of light-emitting single-electron transistors (LESETs) made from quantum dots are theoretically studied by using nonequilibrium Green's function method. Holes residing at QD created by small ac signals added in the…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 David M. -T. Kuo , Yia-chung Chang

Organic light emitting field effect transistors (OLEFETs) with bilayer structures have been widely studied due to their potential to integrate high-mobility organic transistors and efficient organic light emitting diodes. However, these…

Single Electron Transistors (SETs) are nanoscale electrometers of unprecedented sensitivity, and as such have been proposed as read-out devices in a number of quantum computer architectures. We show that the functionality of a standard SET…

Mesoscale and Nanoscale Physics · Physics 2007-08-01 Vincent I. Conrad , Andrew D. Greentree , Lloyd C. L. Hollenberg

We present a novel electronic-structure modulation transistor (EMT), which can possibly be used for post-CMOS logic applications. The device principle is based on the bandwidth modulation of a midgap or near-midgap localized state in the…

Mesoscale and Nanoscale Physics · Physics 2009-02-24 Hassan Raza , Tehseen Z. Raza , Tuo-Hung Hou , Edwin C. kan

We develop a novel field effect transistor (FET) device using solid ion conductor (SIC) as a gate dielectric, and we can tune the carrier density of FeSe by driving lithium ions in and out of the FeSe thin flakes, and consequently control…

Superconductivity · Physics 2017-03-08 B. Lei , N. Z. Wang , C. Shang , F. B. Meng , L. K. Ma , X. G. Luo , T. Wu , Z. Sun , Y. Wang , Z. Jiang , B. H. Mao , Z. Liu , Y. J. Yu , Y. B. Zhang , X. H. Chen

Using a field-effect transistor (FET) configuration with solid Li-ion conductor (SIC) as gate dielectric, we have successfully tuned carrier density in FeSe$_{0.5}$Te$_{0.5}$ thin flakes, and the electronic phase diagram has been mapped…

Superconductivity · Physics 2017-05-31 C. S. Zhu , J. H. Cui , B. Lei , N. Z. Wang , C. Shang , F. B. Meng , L. K. Ma , X. G. Luo , T. Wu , Z. Sun , X. H. Chen

The ability to accurately extract low-amplitude voltage signals is crucial in several fields, ranging from single-use diagnostics and medical technology to robotics and the Internet of Things. The organic electrochemical transistor, which…

Carbon nanotube field-effect transistors (CNT FETs) have been proposed as possible building blocks for future nano-electronics. But a challenge with CNT FETs is that they appear to randomly display varying amounts of hysteresis in their…

We report optically as well as electronically controlled, bio-electronic field-effect transistor (FET) based on the hybrid film of a photo-active purple membrane and electronically conducting single-walled carbon nanotubes (SWNTs). Two…

Applied Physics · Physics 2024-09-05 Vikram Bakaraju , Senthil Prasad , Brijesh Meena , Harsh Chaturvedi

The advent of memristors and resistive switching has transformed solid state physics, enabling advanced applications such as neuromorphic computing. Inspired by these developments, we introduce the concept of Mem-emitters, devices that…

There is an extremely high demand for a high speed, low power, low leakage, and low noise Static Random-Access Memory (SRAM) for high performance cache memories. The energy efficiency of SRAM is of paramount importance in both high…

Applied Physics · Physics 2020-12-08 Antardipan Pal , Yong Zhang , Dennis D. Yau

Correlated electron systems are among the centerpieces of modern condensed matter sciences, where many interesting physical phenomena, such as metal-insulator transition and high-Tc superconductivity appear. Recent efforts have been focused…

Strongly Correlated Electrons · Physics 2013-08-05 You Zhou , Shriram Ramanathan
‹ Prev 1 2 3 10 Next ›