We present a novel electronic-structure modulation transistor (EMT), which can possibly be used for post-CMOS logic applications. The device principle is based on the bandwidth modulation of a midgap or near-midgap localized state in the channel by a gate voltage. A single-band tight-binding method coupled with non-equilibrium Green's function formalism for quantum transport is employed to predict the IV characteristics. Our objective is to confirm if an EMT has a self gain and if it can overcome the 2.3kT/decade thermal limit with low supply voltage. The ON current depends on the bandwidth of the state and is limited by the quantum of conductance for a single band. The OFF current is set by the gate leakage and tunneling through the higher bands, which is expected to be small if these bands are a few eV above the energy level of the localized state.
@article{arxiv.0812.0123,
title = {On the Possibility of an Electronic-structure Modulation Transistor},
author = {Hassan Raza and Tehseen Z. Raza and Tuo-Hung Hou and Edwin C. kan},
journal= {arXiv preprint arXiv:0812.0123},
year = {2009}
}