Topological insulator field-effect transistors (TIFETs) built on 2-D quantum spin Hall insulators are being considered as advanced logic transistors due to their potentially superior performance originating from the dissipationless edge transport. This paper presents a device modeling based on the tight-binding model and the nonequilibrium Green's function formalism to simulate the current-voltage characteristics of the TIFETs. We then use the device simulator to demonstrate the effect of channel length on device performance. The device modeling will not only enable a direct estimation of TIFET performance but also shed light on the nontraditional switching operation via the topological phase transition.
@article{arxiv.2603.06021,
title = {Tight-Binding Device Modeling of 2-D Topological Insulator Field-Effect Transistors With Gate-Induced Phase Transition},
author = {Yungyeong Park and Yosep Park and Hyeonseok Choi and Subeen Lim and Dongwook Kim and Yeonghun Lee},
journal= {arXiv preprint arXiv:2603.06021},
year = {2026}
}