Related papers: Light-effect transistor (LET) with multiple indepe…
Charge-coupled device (CCD), along with the complementary metal-oxide-semiconductor (CMOS), is one of the major imaging technologies. Traditional CCDs rely on the charge transfer between potential wells, which gives them advantages of…
Using a block of three separated solid elements, a thermal source and drain together with a gate made of an insulator-metal transition material exchanging near-field thermal radiation, we introduce a nanoscale analog of a field-effect…
Cryogenic rare event searches based on heat and light composite calorimeters have a common need for large area photon detectors with high quantum efficiency, good radiopurity and high sensitivity. By employing the Neganov-Trofimov-Luke…
Carbon Nanotube (CNT) appears as a promising candidate to shrink field-effect transistors (FET) to the nanometer scale. Extensive experimental works have been performed recently to develop the appropriate technology and to explore DC…
In this paper, we demonstrate by simulation the feasibility of electrostatically doped and therefore reconfigurable planar field-effect-transistor (FET) structure which is based on our already fabricated and published Si-nanowire (SiNW)…
There is a common need in astroparticle experiments such as direct dark matter detection, 0{\nu}\b{eta}\b{eta} (double beta decay without emission of neutrinos) and Coherent Neutrino Nucleus Scattering experiments for light detectors with a…
The commercialization of transistors capable of both switching and amplification in 1960 resulted in the development of second-generation computers, which resulted in the miniaturization and lightening while accelerating the reduction and…
Doping via electrostatic gating is a powerful and widely used technique to tune the electron densities in layered materials. The microscopic details of how these setups affect the layered material are, however, subtle and call for careful…
Transistors, regardless of their size, rely on electrical gates to control the conductance between source and drain contacts. In atomic-scale transistors, this conductance is exquisitely sensitive to single electrons hopping via individual…
Tunnel Field Effect Transistors (TFET) have extremely low leakage current, exhibit excellent subthreshold swing and are less susceptible to short channel effects. However, TFETs do face certain special challenges, particularly with respect…
We analyze the effect of a gate on the conductance of molecules by separately evaluating the gate-induced polarization and the potential shift of the molecule relative to the leads. The calculations use ab initio density functional theory…
Long-range moire patterns in twisted WSe2 enable a built-in, moire-length-scale ferroelectric polarization that can be directly harnessed in electronic devices. Such a built-in ferroic landscape offers a compelling means to enable…
This paper experimentally demonstrates that the AC impedance spectrum of the LED as a photodetector heavily depends on the received optical power, which may cause the impedance mismatch between the LED and the post trans-impedance…
We revisit the spin-injected field effect transistor (spin-FET) by simulating a lattice model based on recursive lattice Green's function approach. In the one-dimensional case and coherent regime, the simulated results reveal noticeable…
Spin field-effect transistors (SFETs) are promising candidates for low-power spin-based electronics, yet existing realizations that rely on spin-orbit coupling are constrained by limited material choices and short spin-coherence lengths.…
We report an improved photosensitivity in few-layer tin disulfide (SnS2) field-effect transistors (FETs) following doping with CdSe/ZnS core/shell quantum dots (QDs). The hybrid QD-SnS2 FET devices achieve more than 500 percent increase in…
Laser cooling is used to produce ultracold atoms and molecules for quantum science and precision measurement applications. Molecules are more challenging to cool than atoms due to their vibrational and rotational internal degrees of…
We propose and analyse a quantum thermal field-effect transistor (qtFET) composed of left-qubit, middle-qutrit, and right-qubit subsystems. In this architecture, the left qubit is coupled to the middle qutrit, which in turn interacts with…
Three-level Lambda systems provide a versatile platform for quantum optical phenomena such as Electromagnetically Induced Transparency (EIT), slow light, and quantum memory. Such Lambda systems have been realized in several quantum hardware…
Steep-slope $\beta$-Ga$_2$O$_3$ nano-membrane negative capacitance field-effect transistors (NC-FETs) are demonstrated with ferroelectric hafnium zirconium oxide in gate dielectric stack. Subthreshold slope less than 60 mV/dec at room…