Related papers: Light-effect transistor (LET) with multiple indepe…
Optical nonlinearities offer unique possibilities for the control of light with light. A prominent example is electromagnetically induced transparency (EIT) where the transmission of a probe beam through an optically dense medium is…
We theoretically and computationally demonstrate that static magnetization can be generated under light illumination via nonlinear Edelstein effect (NLEE). NLEE is applicable to semiconductors under both linearly and circularly polarized…
Optical response of an artificial composite nano-dimer comprising a semiconductor quantum dot and a metal nanosphere is analyzed theoretically. We show that internal degrees of freedom of the system can manifest bistability and optical…
We describe an opto-electronic structure in which charge and spin degrees of freedom in electrical gate-defined quantum dots can be coherently coupled to light. This is achieved via electron-electron interaction or via electron tunneling…
Using calibrated simulations, we report a detailed study of the doping-less tunnel field effect transistor (TFET) on a thin intrinsic silicon film using charge plasma concept. Without the need for any doping, the source and drain regions…
An atom-chip-based integrated optical lattice system for cold and ultracold atom applications is presented. The retro-reflection optics necessary for forming the lattice are bonded directly to the atom chip, enabling a compact and robust…
The implementation of electromagnetically induced transparency (EIT) in a cold Rydberg gas provides an attractive route towards strong photon--photon interactions and fully deterministic all-optical quantum information processing. In this…
Investigation of the inherent field-driven charge transport behaviour of 3D lead halide perovskites has largely remained a challenging task, owing primarily to undesirable ionic migration effects near room temperature. In addition, the…
We report experiment and theory on an ambipolar gate-controlled Si-vacuum field effect transistor (FET) where we study electron and hole (low-temperature 2D) transport in the same device simply by changing the external gate voltage to tune…
Carbon nanotube field-effect transistors (CNT FETs) are regarded as promising candidates for next-generation energy-efficient computing systems. While research has employed the lift-off process to demonstrate the performance of CNT FETs,…
Following how the electrical transistor revolutionized the field of electronics,the realization of an optical transistor in which the flow of light is controlled optically should open the long-sought era of optical computing and new data…
Laser Induced Damage Thresholds (LIDTs) are a measure of the level of fluence an optical component may be expected to handle without observable damage. In this work we present an automated system for measurement of LIDTs for a wide range of…
Two-dimensional (2D) layered materials-based field-effect transistors (FETs) are promising for ultimate scaled electron device applications because of the improved electrostatics to atomically thin body thickness. However, compared with the…
We propose and analyze a novel dual-gate Spin Field Effect Transistor (SpinFET) with half-metallic ferromagnetic source and drain contacts. The transistor has two gate pads that can be biased independently. It can be switched ON or OFF with…
We report a detailed investigation on the properties of correlation spectra for cold atoms under the condition of Electromagnetically Induced Transparency (EIT). We describe the transition in the system from correlation to anti-correlation…
In this paper, we present experimental results and simulation data of an electrostatically doped and therefore voltage-programmable, planar, CMOS-compatible field-effect transistor (FET) structure. This planar device is based on our…
The ability to tune material properties using gate electric field is at the heart of modern electronic technology. It is also a driving force behind recent advances in two-dimensional systems, such as gate-electric-field induced…
Recent years have seen vast progress in the generation and detection of structured light, with potential applications in high capacity optical data storage and continuous variable quantum technologies. Here we measure the transmission of…
We study the consequences of negative differential electron mobility in insulated gate field effect transistors (FETS) using the field model. We show that, in contrast to the case of the monotonic velocity saturation model, the field…
Difficulties in obtaining high-performance p-type transistors and gate insulator charge-trapping effects present two major challenges for III-V complementary metal-oxide semiconductor (CMOS) electronics. We report a p-GaAs nanowire…