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We report the operation of a field-effect transistor based on a single InAs nanowire gated by an ionic liquid. Liquid gating yields very efficient carrier modulation with a transconductance value thirty time larger than standard back gating…

We employ noise spectroscopy and transconductance measurements to establish the optimal regimes of operation for our fabricated silicon nanowire field-effect transistors (Si NW FETs) sensors. A strong coupling between the liquid gate and…

Mesoscale and Nanoscale Physics · Physics 2015-06-18 Sergii Pud , Jing Li , Volodymyr Sibiliev , Mykhaylo Petrychuk , Valery Kovalenko , Andreas Offenhäusser , Svetlana Vitusevich

This work proposes CoMET, a fast and energy-efficient spintronics device for logic applications. An input voltage is applied to a ferroelectric (FE) material, in contact with a composite structure - a ferromagnet (FM) with in-plane magnetic…

Emerging Technologies · Computer Science 2017-04-18 Meghna G. Mankalale , Zhaoxin Liang , Zhengyang Zhao , Chris Kim , Jian-Ping Wang , Sachin S. Sapatnekar

Optical logic has the potential to replace electronics with photonic circuits in applications for which optic-to-electronic conversion is impractical and for integrated all-optical circuits. Nonlinear optics in whispering gallery mode…

Solution processed polymers are at the core of organic electronics. Polyradicals (polymers in which each repeating unit contains an unpaired spin) are unique alternatives to their p-conjugated, semiconducting counterparts. Unique of…

Applied Physics · Physics 2019-10-24 Deepa Singh , Francois Magnan , Joe B. Gilroy , Giovanni Fanchini

In this work it is reported a vertical electrolyte transistor (VET) whose structure is based on stacked layers as described below: bottom contact (source or drain) - channel - permeable intermediate electrode (drain or source) - ion gel…

Applied Physics · Physics 2022-01-13 Keli Fabiana Seidel

Linear optics quantum logic gates are the best tool to generate multi-photon entanglement. Simplifying a recent approach [Phys. Rev. A 65, 062324; Phys. Rev. A 66, 024308] we were able to implement the conditional phase gate with only one…

Quantum Physics · Physics 2009-11-11 Nikolai Kiesel , Christian Schmid , Ulrich Weber , Rupert Ursin , Harald Weinfurter

The advantage of optical bistability (OB) using three-level electromagnetically induced transparency (EIT) atomic system over the two-level system is its controllability, as absorption, dispersion, and optical nonlinearity in one of the…

Quantum Physics · Physics 2019-05-22 Juan D. Serna , Amitabh Joshi

Integrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny. However, realizing the stable static negative capacitance in…

Mesoscale and Nanoscale Physics · Physics 2022-03-01 I. Luk'yanchuk , A. Razumnaya , A. Sené , Y. Tikhonov , V. M. Vinokur

Topological insulators enable non-reciprocal light propagation that is insensitive to disorder and imperfections. Yet, despite considerable attention from the photonics community and beyond, the very feature that has inspired numerous…

Quantum states of light play a pivotal role in modern science[1] and future photonic applications[2]. While impressive progress has been made in their generation and manipulation with high fidelities, the common table-top approach is…

The cold source field-effect transistor (CSFET) is promising for reducing power dissipation in integrated circuits by engineering the density of states at the injecting source. Existing CSFET designs utilizing Dirac-source metals or…

Materials Science · Physics 2026-03-13 Shujin Guo , Qing Shi , Deping Guo , Fei Liu , Xianghua Kong , Yonghong Zhao , Hong Guo

Ferroelectric field-effect transistors integrated on 2D semiconducting platforms are extremely relevant for low power electronics. Here, we propose and demonstrate a novel phase-change ferroelectric field effect transistor (PCFE-FET) for…

Applied Physics · Physics 2024-11-05 Sooraj Sanjay , Jalaja M. A , Navakanta Bhat , Pavan Nukala

Understanding the operation mode of a two-dimensional (2D) material-based field-effect transistor (FET) is one of the most essential issues in the study of electronics and physics. The existing Schottky barrier-FET model for devices with…

Materials Science · Physics 2018-10-01 Nan Fang , Kosuke Nagashio

Electro-optics serves as the crucial bridge between electronics and photonics, unlocking a wide array of applications ranging from communications and computing to sensing and quantum information. Integrated electro-optics approaches in…

We have investigated the spectrum of discrete electronic states in single, nm-scale Al particles incorporated into new tunneling transistors, complete with a gate electrode. The addition of the gate has allowed (a) measurements of the…

Mesoscale and Nanoscale Physics · Physics 2009-10-30 D. C. Ralph , C. T. Black , M. Tinkham

This letter introduces LYT-Net, a novel lightweight transformer-based model for low-light image enhancement (LLIE). LYT-Net consists of several layers and detachable blocks, including our novel blocks--Channel-Wise Denoiser (CWD) and…

Computer Vision and Pattern Recognition · Computer Science 2025-09-11 A. Brateanu , R. Balmez , A. Avram , C. Orhei , C. Ancuti

We investigate the possibility of optical current control through single molecules which are weakly coupled to leads. A master equation approach for the transport through a molecule is combined with a Floquet theory for the time-dependent…

Chemical Physics · Physics 2016-09-08 Jörg Lehmann , Sébastien Camalet , Sigmund Kohler , Peter Hänggi

The linear magnetoelectric effect (ME) is the phenomenon by which an electric field produces a magnetization. Its observation requires both time-reversal and space-inversion symmetries to be broken, as in multiferroics. While the ME effect…

Self-heating in next-generation, high-power-density field-effect transistor limits performance and complicates fabrication. Here, we introduce NEP-FET, a machine-learned framework for device-scale heat transport simulations of field-effect…

Materials Science · Physics 2025-11-26 Ke Xu , Gang Wang , Ting Liang , Yang Xiao , Dongliang Ding , Haichang Guo , Xiang Gao , Lei Tong , Xi Wan , Gang Zhang , Jianbin Xu
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