The bandgap dependence on the number of atomic layers of some families of 2D-materials, can be exploited to engineer and use lateral heterostructures (LHs) as high-performance Field-Effect Transistors (FET). This option can provide very good lattice matching as well as high heterointerface quality. More importantly, this bandgap modulation with layer stacking can give rise to steep transitions in the density of states (DOS) of the 2D material, that can eventually be used to achieve sub-60 mV/decade subthreshold swing in LH-FETs thanks to an energy-filtering source. We have observed this effect in the case of a PdS2 LH-FET due to the particular density of states of its bilayer configuration. Our results are based on ab initio and multiscale materials and device modeling, and incite the exploration of the 2D-material design space in order to find more abrupt DOS transitions and better suitable candidates.
@article{arxiv.2001.03139,
title = {Lateral Heterostructure Field-Effect Transistors Based on 2D-Material Stacks With Varying Thickness and Energy Filtering Source},
author = {Enrique G. Marin and Damiano Marian and Marta Perucchini and Gianluca Fiori and Giuseppe Iannaccone},
journal= {arXiv preprint arXiv:2001.03139},
year = {2020}
}
Comments
This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in ACS Nano, copyright American Chemical Society after peer review. To access the final edited and published work see acsnano.org