In this paper, we propose a novel S/D engineering for dual-gated Bilayer Graphene (BLG) Field Effect Transistor (FET) using doped semiconductors (with a bandgap) as source and drain to obtain unipolar complementary transistors. To simulate the device, a self-consistent Non-Equilibrium Green's Function (NEGF) solver has been developed and validated against published experimental data. Using the simulator, we predict an on-off ratio in excess of 104 and a subthreshold slope of ~110mV/decade with excellent scalability and current saturation, for a 20nm gate length unipolar BLG FET. However, the performance of the proposed device is found to be strongly dependent on the S/D series resistance effect. The obtained results show significant improvements over existing reports, marking an important step towards bilayer graphene logic devices.
@article{arxiv.1101.3123,
title = {High On-Off Ratio Bilayer Graphene Complementary Field Effect Transistors},
author = {Kausik Majumdar and Kota V. R. M. Murali and Navakanta Bhat and Fengnian Xia and Yu-Ming Lin},
journal= {arXiv preprint arXiv:1101.3123},
year = {2016}
}