We report on electronic transport in dual-gate, artificially stacked bilayer graphene field effect transistors (BiGFETs) fabricated from large-area chemical vapor deposited (CVD) graphene. The devices show enhanced tendency to current saturation, which leads to reduced minimum output conductance values. This results in improved intrinsic voltage gain of the devices when compared to monolayer graphene FETs. We employ a physics based compact model originally developed for Bernal stacked bilayer graphene FETs (BSBGFETs) to explore the observed phenomenon. The improvement in current saturation may be attributed to increased charge carrier density in the channel and thus reduced saturation velocity due to carrier-carrier scattering.
@article{arxiv.2212.01877,
title = {Enhanced intrinsic voltage gain in artificially stacked bilayer CVD graphene field effect transistors},
author = {Himadri Pandey and Jorge Daniel Aguirre Morales and Satender Kataria and Sebastien Fregonese and Vikram Passi and Mario Iannazzo and Thomas Zimmer and Eduard Alarcon and Max C. Lemme},
journal= {arXiv preprint arXiv:2212.01877},
year = {2022}
}