Ab Initio Theory of Gate Induced Gaps in Graphene Bilayers
Materials Science
2007-05-23 v3 Strongly Correlated Electrons
Abstract
We study the gate voltage induced gap that occurs in graphene bilayers using \textit{ab initio} density functional theory. Our calculations confirm the qualitative picture suggested by phenomenological tight-binding and continuum models. We discuss enhanced screening of the external interlayer potential at small gate voltages, which is more pronounced in the \textit{ab initio} calculations, and quantify the role of crystalline inhomogeneity using a tight-binding model self-consistent Hartree calculation.
Keywords
Cite
@article{arxiv.cond-mat/0612236,
title = {Ab Initio Theory of Gate Induced Gaps in Graphene Bilayers},
author = {Hongki Min and B. R. Sahu and Sanjay K. Banerjee and A. H. MacDonald},
journal= {arXiv preprint arXiv:cond-mat/0612236},
year = {2007}
}
Comments
7 pages, 7 figures; the effect of r3 coupling included; typo corrected