English
Related papers

Related papers: Exploring properties of the integrating pixels

200 papers

This paper presents the results of the characterisation of a pixel sensor manufactured in OKI 0.2 micron SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation.…

Instrumentation and Detectors · Physics 2011-10-19 Marco Battaglia , Dario Bisello , Devis Contarato , Peter Denes , Piero Giubilato , Serena Mattiazzo , Devis Pantano , Sarah Zalusky

A silicon pixel detector with fine pitch size of 19x19 um, developed base on SOI (silicon on insulator) technology, was tested under the illumination of infrared laser pulses. As an alternative way to particle beam tests, the laser pulses…

Instrumentation and Detectors · Physics 2016-08-03 Yi Liu , Yunpeng Lu , Xudong Ju , Qun Ouyang

A monolithic pixel sensor in deep-submicron Silicon-On-Insulator (SOI) CMOS technology has been designed, manufactured and characterised. This technology is of significant interest for applications in particle tracking and imaging. The…

Instrumentation and Detectors · Physics 2008-07-02 Marco Battaglia , Dario Bisello , Devis Contarato , Peter Denes , Piero Giubilato , Lindsay E. Glesener , Serena Mattiazzo , Chinh Vu

We have been developing the X-ray silicon-on-insulator (SOI) pixel sensor called XRPIX for future astrophysical satellites. XRPIX is a monolithic active pixel sensor consisting of a high-resistivity Si sensor, thin SiO$_2$ insulator, and…

Instrumentation and Methods for Astrophysics · Physics 2020-01-29 K. Hagino , K. Negishi , K. Oono , K. Yarita , T. Kohmura , T. G. Tsuru , T. Tanaka , S. Harada , K. Kayama , H. Matsumura , K. Mori , A. Takeda , Y. Nishioka , M. Yukumoto , K. Fukuda , T. Hida , Y. Arai , I. Kurachi , S. Kishimoto

SOI (Silicon-On-Insulator) pixel sensor is promising technology for developing the high position resolution detector by integrating the small pixels and circuits in the monolithic way. The event driven (trigger mode) SOI based pixel sensor…

The experiment of the future electron-positron colliders has unprecedented requirements on the vertex resolution, such as around 3micron single point resolution for the inner most detector layer, with fast readout, and very low…

Instrumentation and Detectors · Physics 2021-04-13 Jing Dong , Yunpeng Lu , Zhigang Wu , Yang Zhou , Qun Ouyang

This paper presents the design of a new monolithic Silicon-On-Insulator pixel sensor in $200~nm$ SOI CMOS technology. The main application of the proposed pixel detector is the spectroscopy, but it can also be used for the minimum ionizing…

Instrumentation and Detectors · Physics 2015-07-06 Szymon Bugiel , Roma Dasgupta , Sebastian Glab , Marek Idzik , Jakub Moron , Piotr Julian Kapusta , Wojciech Kucewicz , Michal Turala

For large scale applications, hybrid pixel detectors, in which sensor and read-out IC are separate entities, constitute the state of the art in pixel detector technology to date. They have been developed and start to be used as tracking…

Instrumentation and Detectors · Physics 2010-01-22 Norbert Wermes

This paper presents the results of the characterisation of a thin, fully depleted pixel sensor manufactured in SOI technology on high-resistivity substrate with high momentum charged particles. The sensor is thinned to 70 $\mu$m and a thin…

Instrumentation and Detectors · Physics 2012-02-17 Marco Battaglia , Dario Bisello , Devis Contarato , Peter Denes , Piero Giubilato , Serena Mattiazzo , Devis Pantano

This paper presents the results of the characterisation of a back-illuminated pixel sensor manufactured in Silicon-On-Insulator technology on a high-resistivity substrate with soft X-rays. The sensor is thinned and a thin Phosphor layer…

Instrumentation and Detectors · Physics 2015-06-03 Marco Battaglia , Dario Bisello , Richard Celestre , Devis Contarato , Peter Denes , Serena Mattiazzo , Craig Tindall

In this paper, we describe the development of monolithic pixel detectors by using a Silicon-on-Insulator (SOI) technology for X-ray and charged particle applications. The detectors are based on a 0.2 {\mu}m CMOS fully depleted SOI process…

Instrumentation and Detectors · Physics 2019-11-14 S. Mitsui , Y. Arai , T. Miyoshi , A. Takeda

This paper presents the design and results of detailed tests of a CMOS active pixel chip for charged particle detection with in-pixel charge storage for correlated double sampling and readout in rolling shutter mode at frequencies up to 25…

Instrumentation and Detectors · Physics 2016-11-17 Marco Battaglia , Jean-Marie Bussat , Devis Contarato , Peter Denes , Piero Giubilato , Lindsay E. Glesener

This paper presents the design and results of detailed tests of a CMOS active pixel chip for charged particle detection with in-pixel charge storage for correlated double sampling and readout in rolling shutter mode at frequencies up to 25…

Instrumentation and Detectors · Physics 2009-01-27 Marco Battaglia , Jean-Marie Bussat , Devis Contarato , Peter Denes , Piero Giubilato , Lindsay E. Glesener

This paper presents the design and test results of a prototype monolithic pixel sensor manufactured in deep-submicron fully-depleted Silicon-On-Insulator (SOI) CMOS technology. In the SOI technology, a thin layer of integrated electronics…

Instrumentation and Detectors · Physics 2009-06-23 Marco Battaglia , Dario Bisello , Devis Contarato , Peter Denes , Piero Giubilato , Lindsay Glesener , Serena Mattiazzo , Chinh Vu

Monolithic pixel sensors for charged particle detection and imaging applications have been designed and fabricated using commercially available, deep-submicron Silicon-On-Insulator (SOI) processes, which insulate a thin layer of integrated…

Instrumentation and Detectors · Physics 2009-05-08 Marco Battaglia , Dario Bisello , Devis Contarato , Peter Denes , Piero Giubilato , Lindsay Glesener , Serena Mattiazzo , Chinh Qu Vu

0.2 um fully-depleted SOI technology has been developed a for X-ray pixel detectors. To improve the detector performance, some advanced process technologies are developing continuously. To utilize the high resistivity FZ-SOI, slow ramp up…

Instrumentation and Detectors · Physics 2015-11-18 Masao Okihara , Hiroki Kasai , Noriyuki Miura , Naoya Kuriyama , Yoshiki Nagatomo

In-vacuum active pixel detectors enable high sensitivity, highly parallel time- and space-resolved detection of ions from complex surfaces. For the first time, a Timepix detector assembly was combined with a Secondary Ion Mass Spectrometer…

Instrumentation and Detectors · Physics 2013-09-05 András Kiss , Julia H. Jungmann , Donald F. Smith , Ron M. A. Heeren

A hybrid pixel detector based on the concept of simultaneous charge integration and photon counting will be presented. The second generation of a counting and integrating X-ray prototype CMOS chip (CIX) has been operated with different…

Instrumentation and Detectors · Physics 2009-11-13 H. Krüger , J. Fink , E. Kraft , N. Wermes , P. Fischer , I. Peric , C. Herrmann , M. Overdick , W. Rütten

Digital pixel sensor (DPS) has evolved as a pivotal component in modern imaging systems and has the potential to revolutionize various fields such as medical imaging, astronomy, surveillance, IoT devices, etc. Compared to analog pixel…

Computer Vision and Pattern Recognition · Computer Science 2024-12-02 Md Rahatul Islam Udoy , Shamiul Alam , Md Mazharul Islam , Akhilesh Jaiswal , Ahmedullah Aziz

Investigation of HV-CMOS sensors for use as a tracking detector in the ATLAS experiment at the upgraded LHC (HL-LHC) has recently been an active field of research. A potential candidate for a pixel detector built in Silicon-On-Insulator…

Instrumentation and Detectors · Physics 2017-10-27 B. Hiti , V. Cindro , A. Gorišek , T. Hemperek , T. Kishishita , G. Kramberger , H. Krüger , I. Mandić , M. Mikuž , N. Wermes , M. Zavrtanik
‹ Prev 1 2 3 10 Next ›