Related papers: Exploring properties of the integrating pixels
A low noise and wide dynamic range event driven detector for the detection of X-Ray energy is realized using 0.2 [um] Silicon on insulator (SOI) technology. Pixel circuits are divided into two parts; signal sensing circuit and event…
Silicon microstrip detectors are widely used in experiments for space astronomy. Before the detector is assembled, extensive characterization of the silicon microstrip sensors is indispensable and challenging. This work electrically…
The barrel region of the CMS pixel detector will be equipped with ``n-in-n'' type silicon sensors. They are processed on DOFZ material, use the moderated p-spray technique and feature a bias grid. The latter leads to a small fraction of the…
Semiconductor pixel detectors offer features for the detection of radiation which are interesting for particle physics detectors as well as for imaging e.g. in biomedical applications (radiography, autoradiography, protein crystallography)…
The ATLAS collaboration will replace its tracking detector with new all silicon pixel and strip systems. This will allow to cope with the higher radiation and occupancy levels expected after the 5-fold increase in the luminosity of the LHC…
We have been developing monolithic active pixel sensors, known as Kyoto's X-ray SOIPIXs, based on the CMOS SOI (silicon-on-insulator) technology for next-generation X-ray astronomy satellites. The event trigger output function implemented…
CCD sensors do not deliver a perfect image of the light they receive. Beyond the well known linear image smearing due to diffusion of charges during their drift towards the pixel wells, non-linear effects are at play in these sensors. We…
We have been developing the SOI pixel detector ``INTPIX'' for space use and general purpose applications such as the residual stress measurement of a rail and high energy physics experiments. INTPIX is a monolithic pixel detector composed…
We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states…
We have been developing X-ray SOIPIXs for next-generation satellites for X-ray astronomy. Their high time resolution ($\sim10~\mu$s) and event-trigger-output function enable us to read out without pile-ups and to use anti-coincidence…
We report on measurements performed on silicon pixel sensor prototypes exposed to a 200 MeV proton beam at the Indiana University Cyclotron Facility. The sensors are of n+/n/p+ type with multi-guard ring structures on the p+-side and p-stop…
Hybrid pixel single-photon-counting detectors have been successfully employed and widely used in Synchrotron radiation X-ray detection. In this paper, the silicon pixel sensors for single X-ray photon detection, which operate in…
Pixel size in cameras and other refractive imaging devices is typically limited by the free-space diffraction. However, a vast majority of semiconductor-based detectors are based on materials with substantially high refractive index. We…
Single Pixel Imaging is an emerging imaging technique that employs a bucket detector (photodiode) to sample a spatially modulated light field, rather than measuring the spatial distribution with an array of detectors. This approach provides…
A prototype of the CMOS pixel sensor named SUPIX-1 has been fabricated and tested in order to investigate the feasibility of a pixelated tracker for a proposed Higgs factory, namely, the Circular Electron-Positron Collider (CEPC). The…
In order to tackle the charge injection issue that had perplexed the counting type SOI pixel for years, two successive chips CPIXTEG3 and CPIXTEG3b were developed utilizing two shielding mechanisms, Nested-well and Double-SOI, in the LAPIS…
The development of an innovative position sensitive pixelated sensor to detect and measure with high precision the coordinates of the ionizing particles is proposed. The silicon avalanche pixel sensors (APiX) is based on the vertical…
In this paper we discuss the measurement of charge collection in irradiated silicon pixel sensors and the comparison with a detailed simulation. The simulation implements a model of radiation damage by including two defect levels with…
Charge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete…
CMOS Monolithic Active Pixel Sensors (CPS) are ultra-light and highly granular silicon pixel detectors suited for highly sensitive charged particle tracking. Being manufactured with cost efficient standard CMOS processes, CPS may integrate…