Related papers: Exploring properties of the integrating pixels
The performance of novel n-in-p planar pixel detectors, designed for future upgrades of the ATLAS Pixel system is presented. The n-in-p silicon sensors technology is a promising candidate for the pixel upgrade thanks to its radiation…
We are now developing new X-ray imaging system by using Silicon-On-Insulator (SOI) Pixel Detectors. The SOI detector is a monolithic radiation imaging detector based on a 0.2um FD-SOI CMOS process. Special additional process steps are also…
We are developing monolithic pixel sensors based on a 0.2 $\mu$m fully-depleted Silicon-on-Insulator (SOI) technology for HEP experiment applications. The total ionizing dose (TID) effect is the major issue in the applications for hard…
A detailed and accurate characterisation of silicon photomultiplier detectors is required for a better understanding of the signal and noise in many applications. The collected information is a valuable feedback to the manufacturers in…
The Pixel 2010 conference focused on semiconductor pixel detectors for particle tracking/vertexing as well as for imaging, in particular for synchrotron light sources and XFELs. The big LHC hybrid pixel detectors have impressively started…
We present a smart pixel prototype readout integrated circuit (ROIC) designed in CMOS 28 nm bulk process, with in-pixel implementation of an artificial intelligence (AI) / machine learning (ML) based data filtering algorithm designed as…
Highly granular pixel detectors allow for increasingly precise measurements of charged particle tracks. Next-generation detectors require that pixel sizes will be further reduced, leading to unprecedented data rates exceeding those foreseen…
Conventional image sensors are only responsive to the intensity variation of the incoming light wave. By encoding the wavefront information into the balanced detection scheme, we demonstrate an image sensor pixel design that is capable to…
Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterise and qualify this process and to optimise the sensor for the next generation of Monolithic Active…
Results of beam tests with planar silicon pixel sensors aimed towards the ATLAS Insertable B-Layer and High Luminosity LHC (HL-LHC) upgrades are presented. Measurements include spatial resolution, charge collection performance and charge…
In this paper we show how students can measure optical features of smartphone displays through three experiments. Observing diffraction patterns from smartphone displays allows students to determine the Pixels Per Inch (PPI). Observing…
Active Pixel Sensor (APS) technology has shown promise for next-generation vertex detectors. This paper discusses the design and testing of two generations of APS chips. Both are arrays of 128 by 128 pixels, each 20 by 20 micro-m. Each…
CMOS Image Sensors are experiencing significant growth due to their capabilities to be integrated in smartphones with refined image quality. One of the major contributions to the growth of image sensors is the innovation brought about in…
CMOS Pixel Sensors tend to become relevant for a growing spectrum of charged particle detection instruments. This comes mainly from their high granularity and low material budget. However, several potential applications require a higher…
A scanning pixel camera is a novel low-cost, low-power sensor that is not diffraction limited. It produces data as a sequence of samples extracted from various parts of the scene during the course of a scan. It can provide very detailed…
As photonic technologies continue to grow in multidimensional aspects, integrated photonics holds a unique position and continuously presents enormous possibilities to research communities. Applications span across data centers,…
A novel method to estimate the pixels simultaneous detection probability and the spatial resolution of pixelized detectors is proposed, which is based on the determination of the statistical correlations between detector neighbor pixels.…
A single-photon CMOS image sensor design based on pinned photodiode (PPD) with multiple charge transfers and sampling is described. In the proposed pixel architecture, the photogenerated signal is sampled non-destructively multiple times…
3D silicon detectors are characterized by cylindrical electrodes perpendicular to the surface and penetrating into the bulk material in contrast to standard Si detectors with planar electrodes on its top and bottom. This geometry renders…
This letter presents the design of a monolithic pixel sensor with 10x10 micron^2 pixels in OKI 0.15 micron fully depleted SOI technology and first results of its characterisation. The response of the chip to charged particles has been…