Related papers: Silicon MOS Pixel Based on the Deep Trapping Gate …

Silicon quantum devices are maturing from academic single- and two-qubit devices to industrially-fabricated dense quantum-dot (QD) arrays, increasing operational complexity and the need for better pulsed-gate and readout techniques. We…

Investigation of HV-CMOS sensors for use as a tracking detector in the ATLAS experiment at the upgraded LHC (HL-LHC) has recently been an active field of research. A potential candidate for a pixel detector built in Silicon-On-Insulator…

In 2D-semiconductor-based field-effect transistors and optoelectronic devices, metal-semiconductor junctions are one of the crucial factors determining device performance. The Fermi-level (FL) pinning effect, which commonly caused by…

Using a metal-oxide-semiconductor field effect transistor (MOSFET) structure with a high-quality CoFe/n^+Si contact, we systematically study spin injection and spin accumulation in a nondegenerated Si channel with a doping density of ~…

Edge-TCT and charge collection measurements with passive test structures made in LFoundry 150 nm CMOS process on p-type substrate with initial resistivity of over 3 k$\Omega$cm are presented. Measurements were made before and after…

Optical proximity correction (OPC) is crucial for pushing the boundaries of semiconductor manufacturing and enabling the continued scaling of integrated circuits. While pixel-based OPC, termed as inverse lithography technology (ILT), has…

Graphene-like two-dimensional (2D) materials, not only are interesting for their exotic electronic structure and fundamental electronic transport or optical properties but also, hold promises for device miniaturization down to atomic…

Graphene, the carbon monolayer and 2D allotrope of graphite, has the potential to impact technology with a wide range of applications such as optical modulators for high-speed communications. In contrast to modulation devices that rely on…

The majority of microfabricated ion traps in use for quantum information processing are of the 2D 'surface-electrode' type or of the 3D 'wafer' type. Surface-electrode traps greatly simplify fabrication and hold the promise of allowing…

We present a study of the performance of the trapped-ion driven geometric phase gates introduced in [New J. Phys. 15, 083001 (2013)] when realized in a stimulated Raman transition. We show that the gate can achieve errors below the…

Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterise and qualify this process and to optimise the sensor for the next generation of Monolithic Active…

In this letter we discuss how the short channel behavior in sub 100 nm channel range can be improved by inducing a step surface potential profile at the back gate of an asymmetrical double gate (DG) Silicon-On-Insulator (SOI)…

Magnetic quantum sensors based on trapped ions utilize properties of quantum mechanics which have optimized precision and beat current limits in sensor technology. Trapped ions are highly sensitive in a large span of signal ranging from DC…

In this article, we proposed a Variable threshold MOSFET(VTMOS)approach which is realized from Dynamic Threshold MOSFET(DTMOS), suitable for sub-threshold digital circuit operation. Basically the principle of sub- threshold logics is…

The lack of straightforward epitaxial integration of useful telecom lasers on silicon remains the major bottleneck for bringing optical interconnect technology down to the on-chip level. Crystalline silicon itself, an indirect…

This study demonstrates the feasibility of a novel fabrication technique for high spatial resolution CsI: Tl scintillation detectors tailored for single photon emission computed tomography (SPECT) systems. Building upon our previously…

A practical deep neural network's (DNN) evaluation involves thousands of multiply-and-accumulate (MAC) operations. To extend DNN's superior inference capabilities to energy constrained devices, architectures and circuits that minimize…

Recent advances in diffusion transformers (DiTs) have set new standards in image generation, yet remain impractical for on-device deployment due to their high computational and memory costs. In this work, we present an efficient DiT…

To improve transistor density and electronic performance, next-generation semiconductor devices are adopting three-dimensional architectures and feature sizes down to the few-nm regime, which require atomic-scale metrology to identify and…

A reliable and cost-effective interconnect technology is required for the development of hybrid pixel detectors. The interconnect technology needs to be adapted for the pitch and die sizes of the respective applications. For small-scale…