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The CLIC Tracker Detector (CLICTD) is a monolithic pixel sensor featuring pixels of 30um x 37.5um and a small collection diode. The sensor is fabricated in a 180 nm CMOS imaging process, using two different pixel flavours: the first with a…
Gate controllable electronic trap detection method has been demonstrated by regulating the gate potential of MIS devices. This method is based on shift of capacitance voltage (CV) curve as well as flatband voltage (VFB) measure in less than…
Thin-film transistors composed of a hydrogen-containing indium oxide active layer are promising candidates for backplane devices in next-generation flat panel displays, offering higher definition and faster operation. However, the hydrogen…
Depleted monolithic CMOS active pixel sensors (DMAPS) have been developed in order to demonstrate their suitability as pixel detectors in the outer layers of a toroidal LHC apparatus inner tracker (ATLAS ITk) pixel detector in the…
The Silicon Electron Multiplier (SiEM) is a novel sensor concept for minimum ionizing particle (MIP) detection which uses internal gain and fine pitch to achieve excellent temporal and spatial resolution. In contrast to sensors where the…
Two-dimensional topological insulators (2DTI) have attracted increasing attention during the past few years. New 2DTI with increasing larger spin-orbit coupling (SOC) gaps have been predicted by theoretical calculations and some of them…
Electrically-conducting diamond is a promising candidate for next-generation electronic, thermal and electrochemical applications. One of the major obstacles towards its exploitation is the strong degradation that some of its key physical…
Conventional silicon photomultipliers (SiPMs) are well established as light detectors with single-photon-detection capability and used throughout high energy physics, medical, and commercial applications. The possibility to produce single…
Deep levels control the space charge in electrically compensated semi-insulating materials. They limit the performance of radiation detectors but their interaction with free carriers can be favorably exploited in these devices to manipulate…
Graphene's linear bandstructure and two-dimensional density of states provide an implicit advantage for sensing charge. Here, these advantages are leveraged in a deeply depleted graphene-oxide-semiconductor (D2GOS) junction detector…
An orthogonal approximation for the 8-point discrete cosine transform (DCT) is introduced. The proposed transformation matrix contains only zeros and ones; multiplications and bit-shift operations are absent. Close spectral behavior…
In this work, we simulate the expected device performance and the scaling perspectives of Carbon nanotube Field Effect Transistors (CNT-FETs), with doped source and drain extensions. The simulations are based on the self-consistent solution…
Two-dimensional (2D) layered materials-based field-effect transistors (FETs) are promising for ultimate scaled electron device applications because of the improved electrostatics to atomically thin body thickness. However, compared with the…
Optical lattices serve as fundamental building blocks for atomic quantum technology. However, the scale and resolution of these lattices are diffraction-limited to the light wavelength. In conventional lattices, achieving tight confinement…
We have developed a technique that dramatically reduces the contact resistances and depletes a shunting channel between the contacts outside the Hall bar in ultra-high mobility SiGe/Si/SiGe heterostructures. It involves the creation of…
Two-dimensional (2D) materials are particularly attractive to build the channel of next-generation field-effect transistors (FETs) with gate lengths below 10-15 nm. Because the 2D technology has not yet reached the same level of maturity as…
Using accurate dissipative DFT-NEGF atomistic-simulation techniques within the Wannier-Function formalism, we give a fresh look at the possibility of sub-10 nm scaling for high-performance CMOS applications. We show that a combination of…
Achieving stable, high-quality quantum dots has proven challenging within device architectures rooted in conventional solid-state device fabrication paradigms. In fact, these are grappled with complex protocols in order to balance ease of…
Owing to their intrinsic (geometry dependent) radiation hardness, 3D pixel sensors are promising candidates for the innermost tracking layers of the forthcoming experiment upgrades at the Phase 2 High-Luminosity LHC (HL-LHC). To this…
The Gas Pixel Detector belongs to the very limited class of gas detectors optimized for the measurement of X-ray polarization in the emission of astrophysical sources. The choice of the mixture in which X-ray photons are absorbed and…