Related papers: Silicon MOS Pixel Based on the Deep Trapping Gate …

In this paper, we propose difficulty-guided sampling (DGS) to bridge the target gap between the distillation objective and the downstream task, therefore improving the performance of dataset distillation. Deep neural networks achieve…

Silicon is an excellent material for microelectronics and integrated photonics with untapped potential for mid-IR optics. Despite broad recognition of the importance of the third dimension, current lithography methods do not allow…

Ion trap is one of the most promising candidates for quantum computing. Current schemes mainly focus on a linear chain of up to about one hundred ions in a Paul trap. To further scale up the qubit number, one possible direction is to use 2D…

Typical deep neural network (DNN) backdoor attacks are based on triggers embedded in inputs. Existing imperceptible triggers are computationally expensive or low in attack success. In this paper, we propose a new backdoor trigger, which is…

Three-dimensional (3D) pixel sensors are a promising technology for implementing the 4D-tracking paradigm in high-radiation environments. Despite their advantages in radiation tolerance, 3D pixel sensors exhibit non-uniform electric and…

Battery electrode surfaces are generally coated with electronically insulating solid films of thickness 1-50 nm. Both electrons and Li+ can move at the electrode-surface film interface in response to the voltage, which adds complexity to…

We present designs for multipole ion traps based on a set of planar, annular, concentric electrodes which require only rf potentials to confine ions. We illustrate the desirable properties of the traps by considering a few simple cases of…

The Penning-trap electronic-detection technique that offers the precision and sensitivity requested in mass spectrometry for fundamental studies in nuclear and particle physics has not been proven yet to be universal. This has motivated the…

An in-trap decay spectroscopy setup has been developed and constructed for use with the TITAN facility at TRIUMF. The goal of this device is to observe weak electron-capture (EC) branching ratios for the odd-odd intermediate nuclei in the…

We have been developing X-ray SOIPIXs for next-generation satellites for X-ray astronomy. Their high time resolution ($\sim10~\mu$s) and event-trigger-output function enable us to read out without pile-ups and to use anti-coincidence…

The DEPFET collaboration develops highly granular, ultra-transparent active pixel detectors for high-performance vertex reconstruction at future collider experiments. The characterization of detector prototypes has proven that the key…

The apparatus of the ALICE experiment at CERN will be upgraded in 2017/18 during the second long shutdown of the LHC (LS2). A major motivation for this upgrade is to extend the physics reach for charmed and beauty particles down to low…

Hybrid pixel detectors require a reliable and cost-effective interconnect technology adapted to the pitch and die sizes of the respective applications. During the ASIC and sensor R&D phase, and in general for small-scale applications, such…

Understanding carrier trapping in solids has proven key to semiconductor technologies but observations thus far have relied on ensembles of point defects, where the impact of neighboring traps or carrier screening is often important. Here,…

The tunability of the chemical potential for a wide range encompassing the Dirac point is important for many future devices based on topological insulators. Here we report a method to fabricate highly efficient top gates on epitaxially…

In this paper we present a novel, quadruple well process developed in a modern 0.18mu CMOS technology called INMAPS. On top of the standard process, we have added a deep P implant that can be used to form a deep P-well and provide screening…

We discuss a new class of Micro Pattern Gas Detectors, the Gas Pixel Detector (GPD), in which a complete integration between the gas amplification structure and the read-out electronics has been reached. An Application-Specific Integrated…

DEPFET pixel detectors are unique devices in terms of energy and spatial resolution because very low noise (ENC = 2.2e at room temperature) operation can be obtained by implementing the amplifying transistor in the pixel cell itself. Full…

We report the use of dispersive gate sensing (DGS) as a means of probing the charge environment of heterostructure-based qubit devices. The DGS technique, which detects small shifts in the quantum capacitance associated with single-electron…

Upgraded metallurgical grade (UMG) silicon (Si) has raised interest as an alternative material for solar cells due to its low cost, low environmental impact and low CAPEX. Maximum cell efficiencies at the level of those obtained from high…