In this paper we present a novel, quadruple well process developed in a modern 0.18mu CMOS technology called INMAPS. On top of the standard process, we have added a deep P implant that can be used to form a deep P-well and provide screening of N-wells from the P-doped epitaxial layer. This prevents the collection of radiation-induced charge by unrelated N-wells, typically ones where PMOS transistors are integrated. The design of a sensor specifically tailored to a particle physics experiment is presented, where each 50mu pixel has over 150 PMOS and NMOS transistors. The sensor has been fabricated in the INMAPS process and first experimental evidence of the effectiveness of this process on charge collection is presented, showing a significant improvement in efficiency.
@article{arxiv.0807.2920,
title = {Monolithic Active Pixel Sensors (MAPS) in a quadruple well technology for nearly 100% fill factor and full CMOS pixels},
author = {J. A. Ballin and J. P. Crooks and P. D. Dauncey and A. -M. Magnan and Y. Mikami and O. D. Miller and M. Noy and V. Rajovic and M. M. Stanitzki and K. D. Stefanov and R. Turchetta and M. Tyndel and E. G. Villani and N. K. Watson and J. A. Wilson},
journal= {arXiv preprint arXiv:0807.2920},
year = {2009}
}