Related papers: Silicon MOS Pixel Based on the Deep Trapping Gate …
Optical trapping has proven to be a valuable experimental technique for precisely controlling small dielectric objects. However, due to their very nature, conventional optical traps are diffraction limited and require high intensities to…
An ultra thin silicon detector called U3DTHIN has been designed and built for neutral particle analyzers (NPA) and thermal neutron detection. The main purpose of this detector is to provide a state-of-the-art solution for detector system of…
Majorana zero modes, with prospective applications in topological quantum computing, are expected to arise in superconductor/semiconductor interfaces, such as $\beta$-Sn and InSb. However, proximity to the superconductor may also adversely…
Scalability and performance of current flash memories can be improved substantially by replacing the floating poly-Si gate by a layer of Si dots. This multi-dot layer can be fabricated CMOS-compatibly in very thin gate oxide by ion beam…
In the effort to make 2D materials-based devices smaller, faster, and more efficient, it is important to control charge carrier at lengths approaching the nanometer scale. Traditional gating techniques based on capacitive coupling through a…
Dielectrophoretic (DEP) sensing is an extremely important sensing modality that enables the rapid capture and detection of polarizable particles of nano-scale size. This makes it a versatile tool for applications in medical diagnostics,…
The aim of this work is to present the optimization of the gate trench module for use in vertical GaN devices in terms of cleaning process of the etched surface of the gate trench, thickness of gate dielectric and magnesium concentration of…
Deep sub micron HV-CMOS processes offer the opportunity for sensors built by industry standard techniques while being HV tolerant, making them good candidates for drift-based, fast collecting, thus radiation-hard pixel detectors. For the…
The development of an innovative position sensitive pixelated sensor to detect and measure with high precision the coordinates of the ionizing particles is proposed. The silicon avalanche pixel sensors (APiX) is based on the vertical…
Hydrogenation of amorphous silicon (a-Si:H) is critical for reducing defect densities, passivating mid-gap states and surfaces, and improving photoconductivity in silicon-based electro-optical devices. Modelling the atomic scale structure…
Steep transistors are crucial in lowering power consumption of the integrated circuits. However, the difficulties in achieving steepness beyond the Boltzmann limit experimentally have hindered the fundamental challenges in application of…
The ability to manipulate or separate a biological small particle, such as a living cell and embryo, is fundamental needed to many biological and medical applications. The insulator-based dielectrophoresis (iDEP) trapping is composed of…
An on-chip multi-grating device is proposed to interface single-atoms and integrated photonic circuits, by guiding and focusing lasers to the area with ~10um above the chip for trapping, state manipulation, and readout of single Rubidium…
In this paper, we present the unique features exhibited by modified asymmetrical Double Gate (DG) silicon on insulator (SOI) MOSFET. The proposed structure is similar to that of the asymmetrical DG SOI MOSFET with the exception that the…
We use a frequency-dependent electro-optic technique to measure the hole mobility in small molecule organic semiconductors, such as 6,13 bis(triisopropylsilylethynyl)-pentacene. Measurements are made on semiconductor films in bottom gate,…
Ion traps are used for a wide range of applications from metrology to quantum simulations and quantum information processing. Microfabricated chip-based 3D ion traps are scalable to store many ions for the realization of a large number of…
Interface state densities, $D_{IT}$, in metal-oxide-semiconductor (MOS) capacitors are rarely reported in the accumulation energy range. It is recognized that the determination of $D_{IT}$ in accumulation is fundamentally obscured by small…
Accurate and low-latency qubit state measurement is critical for trapped-ion quantum computing. While deep neural networks (DNNs) have been integrated to enhance detection fidelity, their latency performance on specific hardware platforms…
Most digital cameras use sensors coated with a Color Filter Array (CFA) to capture channel components at every pixel location, resulting in a mosaic image that does not contain pixel values in all channels. Current research on…
In order to tackle the charge injection issue that had perplexed the counting type SOI pixel for years, two successive chips CPIXTEG3 and CPIXTEG3b were developed utilizing two shielding mechanisms, Nested-well and Double-SOI, in the LAPIS…