Related papers: Silicon MOS Pixel Based on the Deep Trapping Gate …
A dielectric-modulated double gate bilayer electrodes organic thin-film transistor (DMDGBE-OTFT) based sensor is proposed for label-free biomolecule detection. The double gate of DMDGBE-OTFT is used for creating two symmetrical gates…
Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s based on silicon substrates with a thin epitaxial layer (thickness of 10-15 $\mu$m) in which charge is collected on an electrode, albeit by disordered and slow…
Tunneling field-effect transistors (TFETs) have gained a great deal of recent interest due to their potential to reduce power dissipation in integrated circuits. One major challenge for TFETs so far has been achieving high drive currents,…
Unlike hiding bit-level messages, hiding image-level messages is more challenging, which requires large capacity, high imperceptibility, and high security. Although recent advances in hiding image-level messages have been remarkable,…
Trapped ions are among the most promising platforms for realizing a large-scale quantum information processor. Current progress focuses on integrating optical and electronic components into microfabricated ion traps to allow scaling to…
Devices authentication is one crucial aspect of any communication system. Recently, the physical layer approach radio frequency (RF) fingerprinting has gained increased interest as it provides an extra layer of security without requiring…
As quantum computing hardware becomes more complex with ongoing design innovations and growing capabilities, the quantum computing community needs increasingly powerful techniques for fabrication failure root-cause analysis. This is…
Electrical field control of the carrier density of topological insulators (TI) has greatly expanded the possible practical use of these materials. However, the combination of low temperature local probe studies and a gate tunable TI device…
Accurate defect detection of photovoltaic (PV) cells is critical for ensuring quality and efficiency in intelligent PV manufacturing systems. However, the scarcity of rich defect data poses substantial challenges for effective model…
The experiment of the future electron-positron colliders has unprecedented requirements on the vertex resolution, such as around 3micron single point resolution for the inner most detector layer, with fast readout, and very low…
Trapped ions as one of the most promising quantum-information-processing platforms, yet conventional entangling gates mediated by collective motion remain slow and difficult to scale. Exciting trapped ions to high-lying electronic Rydberg…
We present a self-interaction-corrected (SIC) density-functional-theory (DFT) approach for the description of systems with an unpaired electron or hole such as spin 1/2 defect-centers in solids or radicals. Our functional is…
With the further scaling of silicon MOSFETs becoming increasingly harder, the search for an alternative material became crucial. The electron device community found many of the answers in two dimensional materials, especially graphene. With…
Understanding defects in atomically thin van der Waals (vdW) semiconductors is essential for advancing their use in next-generation optoelectronic and photovoltaic devices. Here, we apply a combination of various impedance spectroscopy…
Electron ptychography enables dose-efficient atomic-resolution imaging, but conventional reconstruction algorithms suffer from noise sensitivity, slow convergence, and extensive manual hyperparameter tuning for regularization, especially in…
The way of reduction of metal oxyde semiconductor (MOS) structures is going to reach limitations and new devices have to be explored as an alternative to MOS technology. Molecular electronic and more particularly self-assembly-molecular…
Silicon metal-oxide-semiconductor (MOS) spin qubits have become a promising platform for quantum information processing, with recent demonstrations of high-fidelity single and two-qubit gates. To move beyond a few qubits, however, more…
Trapped ions are one of the most advanced platforms for quantum technologies, with applications ranging from quantum computing to precision timekeeping. A crucial step towards more compact and scalable systems involves integrating photonic…
The CLIC Tracker Detector (CLICTD) is a monolithic pixel sensor. It is fabricated in a 180 nm CMOS imaging process, modified with an additional deep low-dose n-type implant to obtain full lateral depletion. The sensor features a small…
The recent progress in nanosheet transistors has established two-dimensional (2D) semiconductors as viable candidates for future ultra-scaled electronic devices. Next to reducing contact resistance, identifying good gate dielectrics is a…