We present a study of the performance of the trapped-ion driven geometric phase gates introduced in [New J. Phys. 15, 083001 (2013)] when realized in a stimulated Raman transition. We show that the gate can achieve errors below the fault-tolerance threshold in the presence of laser intensity fluctuations. We also find that, in order to reduce the errors due to photon scattering below the fault-tolerance threshold, very intense laser beams are required to allow for large detunings in the Raman configuration without compromising the gate speed.
@article{arxiv.1312.3227,
title = {Noise Studies of Driven Geometric Phase Gates with Trapped Ions},
author = {A. Lemmer and A. Bermudez and M. B. Plenio},
journal= {arXiv preprint arXiv:1312.3227},
year = {2013}
}
Comments
17 pages, 4 figures to be published in "Proceedings of the International School of Physics "E. Fermi""